BTS621L1E3128AAUMA1 vs BTS621L1E3128ABUMA1 Comparaison
Comparaison détaillée côte à côte de BTS621L1E3128AAUMA1 par Infineon et BTS621L1E3128ABUMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
BTS621L1E3128AAUMA1 - 8.5A Smart High-Side Switch 24V | Infineon
BTS621L1E3128AAUMA1 ✓ ActifInfineon
BTS621L1E3128ABUMA1 - 24V Dual Hi-Side Switch, 8mΩ PROFET | Infineon
BTS621L1E3128ABUMA1 ✓ ActifComparaison des spécifications
| Paramètre | BTS621L1E3128AAUMA1 | BTS621L1E3128ABUMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $2,62 | $2,45 |
| Product Type | Smart High-Side Power Switch (PROFET) | Dual-channel smart high-side power switch (PROFET) |
| Number of Channels | 2 | 2 (dual high-side, 1:1) |
| Rds(on) per Channel (typ) | 8 mΩ | — |
| Continuous Load Current per Channel | 8.5 A | — |
| Operating Voltage Range | 5 V to 34 V | — |
| Load Dump Protection | Up to 42 V | — |
| Input Logic Level | CMOS-compatible, ground-referenced | — |
| Diagnostic Feedback | Current-mirror IS pin (proportional load current sense) | Yes - open-load and overtemperature reporting |
| On-State Resistance | 8 mΩ typical | — |
| Boîtier | PG-TO263-7-2 (DPAK-style, 7 leads + tab) | PG-TO263-7-2 (D2PAK-7, exposed tab) |
| Type de montage | Surface Mount | Surface Mount |
| Température de fonctionnement | -40 C to +150 C (junction) | — |
| Technology | Smart SIPMOS (vertical N-channel FET + charge pump + logic) | Smart SIPMOS (monolithic) |
| Protection Features | Overload, short-circuit, over-temperature, over-voltage, reverse battery | — |
| Automotive Qualification | AEC-Q100 (PROFET family) | — |
| Target Voltage Class | 24 V commercial vehicle systems (trucks, tractors, 24V industrial) | — |
| Lead-Free / RoHS | Yes (compliant) | — |
| FET Topology | — | N-Channel vertical power MOSFET with charge pump |
| On-State Resistance Rds(on) | — | 8 mΩ typical per channel |
| Nominal Operating Voltage | — | 12 V (automotive bus) |
| Maximum Supply Voltage | — | 24 V (load-dump survivable) |
| Continuous Load Current | — | 4.4 A per channel |
| Plage de température de fonctionnement | — | -40 °C to +150 °C junction |
| Input Logic Compatibility | — | CMOS-compatible, ground-referenced |
| Embedded Protection | — | Overload, current limit, short-circuit, thermal shutdown, overvoltage (load dump), fast demagnetization, reverse battery |
| RoHS / Lead-Free | — | Compliant (Pb-free) |