BTS621L1E3128AAUMA1 vs BTS621L1E3128ABUMA1 Comparación
Comparación detallada lado a lado de BTS621L1E3128AAUMA1 por Infineon y BTS621L1E3128ABUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BTS621L1E3128AAUMA1 - 8.5A Smart High-Side Switch 24V | Infineon
BTS621L1E3128AAUMA1 ✓ ActivoInfineon
BTS621L1E3128ABUMA1 - 24V Dual Hi-Side Switch, 8mΩ PROFET | Infineon
BTS621L1E3128ABUMA1 ✓ ActivoComparación de especificaciones
| Parámetro | BTS621L1E3128AAUMA1 | BTS621L1E3128ABUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,62 | $2,45 |
| Product Type | Smart High-Side Power Switch (PROFET) | Dual-channel smart high-side power switch (PROFET) |
| Number of Channels | 2 | 2 (dual high-side, 1:1) |
| Rds(on) per Channel (typ) | 8 mΩ | — |
| Continuous Load Current per Channel | 8.5 A | — |
| Operating Voltage Range | 5 V to 34 V | — |
| Load Dump Protection | Up to 42 V | — |
| Input Logic Level | CMOS-compatible, ground-referenced | — |
| Diagnostic Feedback | Current-mirror IS pin (proportional load current sense) | Yes - open-load and overtemperature reporting |
| On-State Resistance | 8 mΩ typical | — |
| Encapsulado | PG-TO263-7-2 (DPAK-style, 7 leads + tab) | PG-TO263-7-2 (D2PAK-7, exposed tab) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | -40 C to +150 C (junction) | — |
| Technology | Smart SIPMOS (vertical N-channel FET + charge pump + logic) | Smart SIPMOS (monolithic) |
| Protection Features | Overload, short-circuit, over-temperature, over-voltage, reverse battery | — |
| Automotive Qualification | AEC-Q100 (PROFET family) | — |
| Target Voltage Class | 24 V commercial vehicle systems (trucks, tractors, 24V industrial) | — |
| Lead-Free / RoHS | Yes (compliant) | — |
| FET Topology | — | N-Channel vertical power MOSFET with charge pump |
| On-State Resistance Rds(on) | — | 8 mΩ typical per channel |
| Nominal Operating Voltage | — | 12 V (automotive bus) |
| Maximum Supply Voltage | — | 24 V (load-dump survivable) |
| Continuous Load Current | — | 4.4 A per channel |
| Rango de temperatura de funcionamiento | — | -40 °C to +150 °C junction |
| Input Logic Compatibility | — | CMOS-compatible, ground-referenced |
| Embedded Protection | — | Overload, current limit, short-circuit, thermal shutdown, overvoltage (load dump), fast demagnetization, reverse battery |
| RoHS / Lead-Free | — | Compliant (Pb-free) |