CGD65A055S2 vs CGD65C055SP2 Vergleich
Detaillierter Direktvergleich von CGD65A055S2 von Cambridge GaN Devices und CGD65C055SP2 von Cambridge GaN Devices. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Cambridge GaN Devices
CGD65A055S2 - 650V 55mΩ GaN HEMT with ICeGaN Gate | Cambridge GaN Devices
CGD65A055S2 ✓ AktivCambridge GaN Devices
CGD65C055SP2 - 650V 27A GaN HEMT, BHDFN-9-1 | Cambridge GaN Devices
CGD65C055SP2 ✓ AktivSpezifikationsvergleich
| Parameter | CGD65A055S2 | CGD65C055SP2 |
|---|---|---|
| Marke | Cambridge GaN Devices | Cambridge GaN Devices |
| Kategorie | Transistors | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,85 | $2,49 |
| Manufacturer | Cambridge GaN Devices | Cambridge GaN Devices (CGD) |
| Technology | GaN-on-Si HEMT (enhancement mode) | ICeGaN® GaN-on-Si, enhancement-mode |
| Drain-to-Source Voltage (VDS) | 650 V | — |
| On-Resistance (RDS(on)) | 55 mΩ | — |
| Kontinuierlicher Drain-Strom (TC=25°C) | 27 A | — |
| Gate Technology | ICeGaN™ (standard-driver compatible) | — |
| Current Sense Pin | Yes (integrated CS output) | — |
| Integrated Protection Circuit | NL³ (non-linear low-loss) | — |
| Reverse Recovery Charge (Qrr) | 0 nC (zero, typical for GaN) | — |
| Gehäuse | 16-pin DFN 8x8 mm | BHDFN-9-1 (Bottom-side cooled, wettable flank) |
| Montageart | Surface Mount | Surface Mount |
| Channel Type | N-Channel | N-Channel |
| Operating Mode | Enhancement-mode (normally-off) | — |
| RoHS-Status | Compliant (lead-free) | Compliant |
| Polarity | Single FET | — |
| Part Number | — | CGD65C055SP2 |
| Transistortyp | — | N-Channel GaN HEMT (Enhancement Mode, Normally-Off) |
| Drain-Source Voltage (V_DS max) | — | 650 V |
| Continuous Drain Current (I_D) | — | 27 A |
| On-Resistance (R_DS(on)) | — | 55 mΩ |
| Gate Threshold Voltage (V_TH) | — | 3 V |
| Gate Drive Voltage Range | — | 9 V to 20 V |
| Gate Turn-Off Voltage | — | 0 V (genuine 0 V turn-off per ICeGaN) |
| Betriebstemperaturbereich | — | [DATA_NEEDED: operating temperature range] |
| Thermal Resistance Junction-to-Case (R_thJC) | — | [DATA_NEEDED: R_thJC in C/W] |
| Lead-Free | — | Yes |
| MSL-Level | — | [DATA_NEEDED: MSL level] |