CGD65A055S2 vs CGD65C055SP2 Comparación
Comparación detallada lado a lado de CGD65A055S2 por Cambridge GaN Devices y CGD65C055SP2 por Cambridge GaN Devices. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Cambridge GaN Devices
CGD65A055S2 - 650V 55mΩ GaN HEMT with ICeGaN Gate | Cambridge GaN Devices
CGD65A055S2 ✓ ActivoCambridge GaN Devices
CGD65C055SP2 - 650V 27A GaN HEMT, BHDFN-9-1 | Cambridge GaN Devices
CGD65C055SP2 ✓ ActivoComparación de especificaciones
| Parámetro | CGD65A055S2 | CGD65C055SP2 |
|---|---|---|
| Marca | Cambridge GaN Devices | Cambridge GaN Devices |
| Categoría | Transistors | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,85 | $2,49 |
| Manufacturer | Cambridge GaN Devices | Cambridge GaN Devices (CGD) |
| Technology | GaN-on-Si HEMT (enhancement mode) | ICeGaN® GaN-on-Si, enhancement-mode |
| Drain-to-Source Voltage (VDS) | 650 V | — |
| On-Resistance (RDS(on)) | 55 mΩ | — |
| Corriente de drenador continua (TC=25°C) | 27 A | — |
| Gate Technology | ICeGaN™ (standard-driver compatible) | — |
| Current Sense Pin | Yes (integrated CS output) | — |
| Integrated Protection Circuit | NL³ (non-linear low-loss) | — |
| Reverse Recovery Charge (Qrr) | 0 nC (zero, typical for GaN) | — |
| Encapsulado | 16-pin DFN 8x8 mm | BHDFN-9-1 (Bottom-side cooled, wettable flank) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Channel Type | N-Channel | N-Channel |
| Operating Mode | Enhancement-mode (normally-off) | — |
| Estado RoHS | Compliant (lead-free) | Compliant |
| Polarity | Single FET | — |
| Part Number | — | CGD65C055SP2 |
| Tipo de transistor | — | N-Channel GaN HEMT (Enhancement Mode, Normally-Off) |
| Drain-Source Voltage (V_DS max) | — | 650 V |
| Continuous Drain Current (I_D) | — | 27 A |
| On-Resistance (R_DS(on)) | — | 55 mΩ |
| Gate Threshold Voltage (V_TH) | — | 3 V |
| Gate Drive Voltage Range | — | 9 V to 20 V |
| Gate Turn-Off Voltage | — | 0 V (genuine 0 V turn-off per ICeGaN) |
| Rango de temperatura de funcionamiento | — | [DATA_NEEDED: operating temperature range] |
| Thermal Resistance Junction-to-Case (R_thJC) | — | [DATA_NEEDED: R_thJC in C/W] |
| Lead-Free | — | Yes |
| Nivel MSL | — | [DATA_NEEDED: MSL level] |