CGD65A130S2 vs CGD65A130SH2 Vergleich
Detaillierter Direktvergleich von CGD65A130S2 von Cambridge GaN Devices und CGD65A130SH2 von Cambridge GaN Devices. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Cambridge GaN Devices
CGD65A130SH2 - 650V GaN HEMT 12A 55mΩ ICeGaN | Cambridge GaN Devices
CGD65A130SH2 ✓ AktivSpezifikationsvergleich
| Parameter | CGD65A130S2 | CGD65A130SH2 |
|---|---|---|
| Marke | Cambridge GaN Devices | Cambridge GaN Devices |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $4,65 | $3,95 |
| Manufacturer | Cambridge GaN Devices | — |
| Technology | GaN-on-Si HEMT (enhancement-mode, ICeGaN™ gate) | GaN-on-Si with ICeGaN® gate |
| Drain-Source Voltage (VDS, max) | 650 V | — |
| On-State Resistance (RDS(on)) | 130 mΩ (typ) | — |
| Continuous Drain Current (ID) | [DATA_NEEDED: continuous ID at 25°C and 100°C] | 12 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM rating] | — |
| Gate Charge (Qg, total) | [DATA_NEEDED: Qg typical value] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss value at VDS=400V] | — |
| Reverse Recovery Charge (Qrr) | 0 nC (GaN - negligible) | Near zero (GaN intrinsic; datasheet figure) |
| Gate-Source Voltage Rating | ±20 V (ICeGaN robust gate; see datasheet) | — |
| Betriebs-Sperrschichttemperatur | -40°C to +150°C | — |
| Gehäuse | DFN-16 (8 × 8 mm) with exposed pad | 16-DFN (8x8 mm) with exposed thermal pad |
| Montageart | Surface Mount | Surface Mount |
| Integrated Features | Current sense, Miller clamp (NL³), ICeGaN gate | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | [DATA_NEEDED: MSL rating] | MSL3 (typical for 16-DFN GaN packages) |
| Transistortyp | — | GaN HEMT, N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | — | 650 V |
| On-Resistance (RDS(on)) | — | 55 mΩ (typical) |
| Gate Threshold | — | ICeGaN® 5 V compatible gate-threshold window |
| Current Sense Pin | — | Integrated CS output (digital/analog ratio) with NL³ circuit |
| Switching Frequency Suitability | — | Up to several MHz (typical GaN-HEMT range) |
| Betriebstemperatur | — | [DATA_NEEDED: full -40C to +150C TJ range] |
| Halogenfrei | — | Yes |