CGD65A130S2 vs CGD65A130SH2 Comparaison
Comparaison détaillée côte à côte de CGD65A130S2 par Cambridge GaN Devices et CGD65A130SH2 par Cambridge GaN Devices. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Cambridge GaN Devices
CGD65A130SH2 - 650V GaN HEMT 12A 55mΩ ICeGaN | Cambridge GaN Devices
CGD65A130SH2 ✓ ActifComparaison des spécifications
| Paramètre | CGD65A130S2 | CGD65A130SH2 |
|---|---|---|
| Marque | Cambridge GaN Devices | Cambridge GaN Devices |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $4,65 | $3,95 |
| Manufacturer | Cambridge GaN Devices | — |
| Technology | GaN-on-Si HEMT (enhancement-mode, ICeGaN™ gate) | GaN-on-Si with ICeGaN® gate |
| Drain-Source Voltage (VDS, max) | 650 V | — |
| On-State Resistance (RDS(on)) | 130 mΩ (typ) | — |
| Continuous Drain Current (ID) | [DATA_NEEDED: continuous ID at 25°C and 100°C] | 12 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM rating] | — |
| Gate Charge (Qg, total) | [DATA_NEEDED: Qg typical value] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss value at VDS=400V] | — |
| Reverse Recovery Charge (Qrr) | 0 nC (GaN - negligible) | Near zero (GaN intrinsic; datasheet figure) |
| Gate-Source Voltage Rating | ±20 V (ICeGaN robust gate; see datasheet) | — |
| Température de jonction en fonctionnement | -40°C to +150°C | — |
| Boîtier | DFN-16 (8 × 8 mm) with exposed pad | 16-DFN (8x8 mm) with exposed thermal pad |
| Type de montage | Surface Mount | Surface Mount |
| Integrated Features | Current sense, Miller clamp (NL³), ICeGaN gate | — |
| Statut RoHS | Compliant | Compliant |
| Niveau MSL | [DATA_NEEDED: MSL rating] | MSL3 (typical for 16-DFN GaN packages) |
| Type de transistor | — | GaN HEMT, N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | — | 650 V |
| On-Resistance (RDS(on)) | — | 55 mΩ (typical) |
| Gate Threshold | — | ICeGaN® 5 V compatible gate-threshold window |
| Current Sense Pin | — | Integrated CS output (digital/analog ratio) with NL³ circuit |
| Switching Frequency Suitability | — | Up to several MHz (typical GaN-HEMT range) |
| Température de fonctionnement | — | [DATA_NEEDED: full -40C to +150C TJ range] |
| Sans halogène | — | Yes |