CGD65A130S2 vs CGD65A130SH2 Сравнение
Подробное сравнение бок о бок CGD65A130S2 от Cambridge GaN Devices и CGD65A130SH2 от Cambridge GaN Devices. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Cambridge GaN Devices
CGD65A130S2 - 650V 130mΩ GaN HEMT | Cambridge GaN Devices
CGD65A130S2 ✓ АктивенCambridge GaN Devices
CGD65A130SH2 - 650V GaN HEMT 12A 55mΩ ICeGaN | Cambridge GaN Devices
CGD65A130SH2 ✓ АктивенСравнение характеристик
| Параметр | CGD65A130S2 | CGD65A130SH2 |
|---|---|---|
| Бренд | Cambridge GaN Devices | Cambridge GaN Devices |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $4,65 | $3,95 |
| Manufacturer | Cambridge GaN Devices | — |
| Technology | GaN-on-Si HEMT (enhancement-mode, ICeGaN™ gate) | GaN-on-Si with ICeGaN® gate |
| Drain-Source Voltage (VDS, max) | 650 V | — |
| On-State Resistance (RDS(on)) | 130 mΩ (typ) | — |
| Continuous Drain Current (ID) | [DATA_NEEDED: continuous ID at 25°C and 100°C] | 12 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM rating] | — |
| Gate Charge (Qg, total) | [DATA_NEEDED: Qg typical value] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss value at VDS=400V] | — |
| Reverse Recovery Charge (Qrr) | 0 nC (GaN - negligible) | Near zero (GaN intrinsic; datasheet figure) |
| Gate-Source Voltage Rating | ±20 V (ICeGaN robust gate; see datasheet) | — |
| Рабочая температура перехода | -40°C to +150°C | — |
| Корпус | DFN-16 (8 × 8 mm) with exposed pad | 16-DFN (8x8 mm) with exposed thermal pad |
| Тип монтажа | Surface Mount | Surface Mount |
| Integrated Features | Current sense, Miller clamp (NL³), ICeGaN gate | — |
| Статус RoHS | Compliant | Compliant |
| Уровень MSL | [DATA_NEEDED: MSL rating] | MSL3 (typical for 16-DFN GaN packages) |
| Тип транзистора | — | GaN HEMT, N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | — | 650 V |
| On-Resistance (RDS(on)) | — | 55 mΩ (typical) |
| Gate Threshold | — | ICeGaN® 5 V compatible gate-threshold window |
| Current Sense Pin | — | Integrated CS output (digital/analog ratio) with NL³ circuit |
| Switching Frequency Suitability | — | Up to several MHz (typical GaN-HEMT range) |
| Рабочая температура | — | [DATA_NEEDED: full -40C to +150C TJ range] |
| Без галогенов | — | Yes |