CGD65A130S2 vs CGD65A130SH2 Comparación
Comparación detallada lado a lado de CGD65A130S2 por Cambridge GaN Devices y CGD65A130SH2 por Cambridge GaN Devices. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Cambridge GaN Devices
CGD65A130S2 - 650V 130mΩ GaN HEMT | Cambridge GaN Devices
CGD65A130S2 ✓ ActivoCambridge GaN Devices
CGD65A130SH2 - 650V GaN HEMT 12A 55mΩ ICeGaN | Cambridge GaN Devices
CGD65A130SH2 ✓ ActivoComparación de especificaciones
| Parámetro | CGD65A130S2 | CGD65A130SH2 |
|---|---|---|
| Marca | Cambridge GaN Devices | Cambridge GaN Devices |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $4,65 | $3,95 |
| Manufacturer | Cambridge GaN Devices | — |
| Technology | GaN-on-Si HEMT (enhancement-mode, ICeGaN™ gate) | GaN-on-Si with ICeGaN® gate |
| Drain-Source Voltage (VDS, max) | 650 V | — |
| On-State Resistance (RDS(on)) | 130 mΩ (typ) | — |
| Continuous Drain Current (ID) | [DATA_NEEDED: continuous ID at 25°C and 100°C] | 12 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM rating] | — |
| Gate Charge (Qg, total) | [DATA_NEEDED: Qg typical value] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss value at VDS=400V] | — |
| Reverse Recovery Charge (Qrr) | 0 nC (GaN - negligible) | Near zero (GaN intrinsic; datasheet figure) |
| Gate-Source Voltage Rating | ±20 V (ICeGaN robust gate; see datasheet) | — |
| Temperatura de unión de funcionamiento | -40°C to +150°C | — |
| Encapsulado | DFN-16 (8 × 8 mm) with exposed pad | 16-DFN (8x8 mm) with exposed thermal pad |
| Tipo de montaje | Surface Mount | Surface Mount |
| Integrated Features | Current sense, Miller clamp (NL³), ICeGaN gate | — |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | [DATA_NEEDED: MSL rating] | MSL3 (typical for 16-DFN GaN packages) |
| Tipo de transistor | — | GaN HEMT, N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | — | 650 V |
| On-Resistance (RDS(on)) | — | 55 mΩ (typical) |
| Gate Threshold | — | ICeGaN® 5 V compatible gate-threshold window |
| Current Sense Pin | — | Integrated CS output (digital/analog ratio) with NL³ circuit |
| Switching Frequency Suitability | — | Up to several MHz (typical GaN-HEMT range) |
| Temperatura de funcionamiento | — | [DATA_NEEDED: full -40C to +150C TJ range] |
| Sin halógenos | — | Yes |