CGD65C055SP2 vs CGD65A055S2 Vergleich
Detaillierter Direktvergleich von CGD65C055SP2 von Cambridge GaN Devices und CGD65A055S2 von Cambridge GaN Devices. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Cambridge GaN Devices
CGD65C055SP2 - 650V 27A GaN HEMT, BHDFN-9-1 | Cambridge GaN Devices
CGD65C055SP2 ✓ AktivCambridge GaN Devices
CGD65A055S2 - 650V 55mΩ GaN HEMT with ICeGaN Gate | Cambridge GaN Devices
CGD65A055S2 ✓ AktivSpezifikationsvergleich
| Parameter | CGD65C055SP2 | CGD65A055S2 |
|---|---|---|
| Marke | Cambridge GaN Devices | Cambridge GaN Devices |
| Kategorie | MOSFETs | Transistors |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,49 | $2,85 |
| Manufacturer | Cambridge GaN Devices (CGD) | Cambridge GaN Devices |
| Part Number | CGD65C055SP2 | — |
| Transistortyp | N-Channel GaN HEMT (Enhancement Mode, Normally-Off) | — |
| Drain-Source Voltage (V_DS max) | 650 V | — |
| Continuous Drain Current (I_D) | 27 A | — |
| On-Resistance (R_DS(on)) | 55 mΩ | — |
| Gate Threshold Voltage (V_TH) | 3 V | — |
| Gate Drive Voltage Range | 9 V to 20 V | — |
| Gate Turn-Off Voltage | 0 V (genuine 0 V turn-off per ICeGaN) | — |
| Technology | ICeGaN® GaN-on-Si, enhancement-mode | GaN-on-Si HEMT (enhancement mode) |
| Gehäuse | BHDFN-9-1 (Bottom-side cooled, wettable flank) | 16-pin DFN 8x8 mm |
| Montageart | Surface Mount | Surface Mount |
| Channel Type | N-Channel | N-Channel |
| Betriebstemperaturbereich | [DATA_NEEDED: operating temperature range] | — |
| Thermal Resistance Junction-to-Case (R_thJC) | [DATA_NEEDED: R_thJC in C/W] | — |
| RoHS-Status | Compliant | Compliant (lead-free) |
| Lead-Free | Yes | — |
| MSL-Level | [DATA_NEEDED: MSL level] | — |
| Drain-to-Source Voltage (VDS) | — | 650 V |
| On-Resistance (RDS(on)) | — | 55 mΩ |
| Kontinuierlicher Drain-Strom (TC=25°C) | — | 27 A |
| Gate Technology | — | ICeGaN™ (standard-driver compatible) |
| Current Sense Pin | — | Yes (integrated CS output) |
| Integrated Protection Circuit | — | NL³ (non-linear low-loss) |
| Reverse Recovery Charge (Qrr) | — | 0 nC (zero, typical for GaN) |
| Operating Mode | — | Enhancement-mode (normally-off) |
| Polarity | — | Single FET |