DMC2400UV-7 vs FDD8424H Vergleich
Detaillierter Direktvergleich von DMC2400UV-7 von Diodes Incorporated und FDD8424H von onsemi. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Diodes Incorporated
DMC2400UV-7 - 20V Complementary N/P MOSFET Array | Diodes Inc
DMC2400UV-7 ✓ Aktiv
Spezifikationsvergleich
| Parameter | DMC2400UV-7 | FDD8424H |
|---|---|---|
| Marke | Diodes Incorporated | onsemi |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,14 | $0,39 |
| FET Type | N and P-Channel Complementary Pair | — |
| Drain-to-Source Voltage (Vdss) | 20 V | — |
| Continuous Drain Current (N-Ch) @ 25C | 1.03 A | — |
| Continuous Drain Current (P-Ch) @ 25C | 700 mA | — |
| RDS(on) Max @ VGS=4.5V, Id=200mA | 480 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | <1 V (low threshold) | — |
| Total Package Power Dissipation | 450 mW | — |
| Eingangskapazität | Low (per datasheet) | — |
| Switching Speed | Fast | — |
| Input/Output Leakage | Low | — |
| Betriebs-Sperrschichttemperatur | -55C to +150C | -55 °C to +150 °C |
| Montageart | Surface Mount | Surface Mount |
| Gehäuse | SOT-563 | — |
| Configuration | Complementary Pair (N + P) | N-Channel and P-Channel, independent dice |
| RoHS-Status | Compliant | Compliant |
| Manufacturer | — | onsemi (formerly Fairchild Semiconductor) |
| Product Type | — | Dual N-Channel and P-Channel MOSFET |
| Process Technology | — | PowerTrench (advanced trench-gate) |
| Package Type | — | TO-252 (DPAK), surface mount |
| N-Channel VDS (Drain-Source Voltage) | — | 40 V |
| N-Channel Continuous Drain Current | — | 20 A |
| N-Channel RDS(on) max at VGS=10V | — | 24 mΩ |
| P-Channel VDS (Drain-Source Voltage) | — | -40 V |
| P-Channel Continuous Drain Current | — | -20 A |
| P-Channel RDS(on) max at VGS=-10V | — | 54 mΩ |
| Gate Charge N-Ch (Qg) typ at VGS=10V | — | 20 nC |
| Input Capacitance Ciss max | — | 1000 pF |
| Total Power Dissipation (Pd) | — | 1.3 W |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Halogenfrei | — | Compliant per GlobalSpec listing |
| ECCN | — | EAR99 |