EDB1332BDBH-1DAUT-F-D vs EDB5432BEBH-1DAUT-F-D Vergleich
Detaillierter Direktvergleich von EDB1332BDBH-1DAUT-F-D von Micron Technology und EDB5432BEBH-1DAUT-F-D von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Micron Technology
EDB1332BDBH-1DAUT-F-D - 1Gbit LPDDR2 533MHz | Micron
EDB1332BDBH-1DAUT-F-D ✓ AktivMicron Technology
EDB5432BEBH-1DAUT-F-D - 512Mb LPDDR2 DRAM 533MHz | Micron
EDB5432BEBH-1DAUT-F-D ✓ AktivSpezifikationsvergleich
| Parameter | EDB1332BDBH-1DAUT-F-D | EDB5432BEBH-1DAUT-F-D |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,16 | $2,45 |
| Speichertyp | SDRAM - Mobile LPDDR2 | Mobile LPDDR2 SDRAM |
| Speichergröße | 1 Gbit | 512 Mbit |
| Speicherorganisation | 32M x 32 | 16M x 32 |
| Schnittstelle | Parallel | Parallel |
| Clock Frequency | 533 MHz | 533 MHz |
| Core Supply Voltage | 1.2 V | — |
| Supply Voltage Range | 1.14 V to 1.95 V | 1.14 V to 1.95 V |
| Access Mode | Single Bank Page Burst | — |
| Gehäuse | 134-VFBGA (10 x 11.5 mm) | 134-VFBGA (10 x 11.5 mm) |
| Number of Terminals | 134 | — |
| Montageart | Surface Mount | Surface Mount |
| Temperature Grade | Automotive | Automotive |
| Package Shape | Rectangular | Rectangular |
| Packaging Suffix | -D (Dry Pack) | — |
| Moisture Sensitivity | Dry Pack (per -D suffix) | — |
| Betriebstemperatur | [DATA_NEEDED: Operating Temperature] | [DATA_NEEDED: operating temperature range] |
| Core Voltage | — | 1.2 V (typical, LPDDR2) |
| Terminals | — | 134 balls |
| Terminal Form | — | Ball (VFBGA) |
| RoHS Code | — | Yes (D suffix, lead-free) |
| Part Life Cycle Code | — | Active |
| Access Time / CAS Latency | — | [DATA_NEEDED: CAS latency] |
| Standard Qty per Reel/Tray | — | [DATA_NEEDED: packaging standard quantity] |