EDB1332BDBH-1DAUT-F-D vs EDB5432BEBH-1DAUT-F-D 对比

详细并排对比 EDB1332BDBH-1DAUT-F-D 出自 Micron Technology 和 EDB5432BEBH-1DAUT-F-D 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
EDB1332BDBH-1DAUT-F-D EDB1332BDBH-1DAUT-F-D - 1Gbit LPDDR2 533MHz | Micron

EDB1332BDBH-1DAUT-F-D - 1Gbit LPDDR2 533MHz | Micron

EDB1332BDBH-1DAUT-F-D ✓ 量产中
Micron Technology
EDB5432BEBH-1DAUT-F-D EDB5432BEBH-1DAUT-F-D - 512Mb LPDDR2 DRAM 533MHz | Micron

EDB5432BEBH-1DAUT-F-D - 512Mb LPDDR2 DRAM 533MHz | Micron

EDB5432BEBH-1DAUT-F-D ✓ 量产中

规格对比

参数 EDB1332BDBH-1DAUT-F-D EDB5432BEBH-1DAUT-F-D
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.16 $2.45
存储器类型 SDRAM - Mobile LPDDR2 Mobile LPDDR2 SDRAM
存储容量 1 Gbit 512 Mbit
存储组织 32M x 32 16M x 32
接口 Parallel Parallel
Clock Frequency 533 MHz 533 MHz
Core Supply Voltage 1.2 V —
Supply Voltage Range 1.14 V to 1.95 V 1.14 V to 1.95 V
Access Mode Single Bank Page Burst —
封装 134-VFBGA (10 x 11.5 mm) 134-VFBGA (10 x 11.5 mm)
Number of Terminals 134 —
安装类型 Surface Mount Surface Mount
Temperature Grade Automotive Automotive
Package Shape Rectangular Rectangular
Packaging Suffix -D (Dry Pack) —
Moisture Sensitivity Dry Pack (per -D suffix) —
工作温度 [DATA_NEEDED: Operating Temperature] [DATA_NEEDED: operating temperature range]
Core Voltage — 1.2 V (typical, LPDDR2)
Terminals — 134 balls
Terminal Form — Ball (VFBGA)
RoHS Code — Yes (D suffix, lead-free)
Part Life Cycle Code — Active
Access Time / CAS Latency — [DATA_NEEDED: CAS latency]
Standard Qty per Reel/Tray — [DATA_NEEDED: packaging standard quantity]

数据手册与资源

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