EP3C16F256I7 vs EP3C16F256I7N Vergleich

Detaillierter Direktvergleich von EP3C16F256I7 von Intel und EP3C16F256I7N von Intel. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter EP3C16F256I7 EP3C16F256I7N
Marke Intel Intel
Kategorie FPGA & CPLD FPGA & CPLD
Lebenszyklusstatus NRND Aktiv
Device Type Cyclone III Field Programmable Gate Array (FPGA) —
Logic Elements 15,408 logic elements —
Logic Array Blocks 963 LABs —
User I/O Count 168 I/Os —
Embedded Memory 516,096 bits 56 M9K blocks (504 Kbit)
Maximum Frequency 437.5 MHz —
Core Supply Voltage 1.2 V —
Gehäuse 256-LBGA (FBGA) 256-ball FBGA (17 mm x 17 mm, 1.0 mm pitch)
Total Terminals 256 terminals —
Betriebstemperatur -40°C to 125°C -40C to +100C (industrial, I7)
Montageart Surface mount —
Lead-Free Status Lead free —
MSL Classification [DATA_NEEDED: MSL classification] —
Programmable Logic FPGA logic array with 15,408 logic elements —
I/O Standards [DATA_NEEDED: supported I/O standards] —
Speichertyp [DATA_NEEDED: embedded memory organization and block count] —
PLL Count [DATA_NEEDED: PLL count] —
Differential I/O [DATA_NEEDED: differential I/O capability] —
RoHS-Status [DATA_NEEDED: RoHS status] —
REACH Status [DATA_NEEDED: REACH status] —
Family — Cyclone III
Logic Elements (LEs) — 15408
Logic Array Blocks (LABs) — 963
Total Memory Bits — 516096
Embedded 18x18 Multipliers — 56
PLLs — 4
Maximum User I/O Pins — 168
Supply Voltage (Core) — 1.2 V typical
Process Technology — TSMC 60 nm low-leakage
Configuration — SRAM-based, requires external config device (EPCS/EPCQ)
Lead-Free / Pb-Free — Yes (N suffix per JEDEC JESD97)
RoHS Compliance — Compliant

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