EP3C40F780C7 vs EP3C40F780C6N Vergleich
Detaillierter Direktvergleich von EP3C40F780C7 von Intel und EP3C40F780C6N von Intel. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | EP3C40F780C7 | EP3C40F780C6N |
|---|---|---|
| Marke | Intel | Intel |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | NRND | NRND |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $139,50 | $172,00 |
| Family | Cyclone III | Cyclone III |
| Logic Elements (LE) | 39,600 | — |
| Number of Logic Cells | 39,600 | — |
| Total Memory Bits | 1,161,216 bits | — |
| Embedded 18x18 Multipliers | 126 | — |
| Number of PLLs | 4 | — |
| User I/O Count | 535 | — |
| I/O Banks | 8 | — |
| Gehäuse | 780-ball FBGA (F780) | 780-ball FBGA (FineLine BGA) |
| Package Dimensions | 29 x 29 mm | 29 x 29 mm |
| Ball Pitch | 1.0 mm | 1.0 mm |
| Core Voltage (VCCINT) | 1.2 V | — |
| I/O Voltage (VCCIO) | 1.2 V to 3.3 V | — |
| Betriebstemperatur | 0C to +85C (Commercial) | 0C to +85C (commercial) |
| Speed Grade | C7 | 6 (commercial) |
| Process Technology | 60 nm TSMC low-power CMOS | 60 nm CMOS |
| Configuration | Active Serial / Passive Parallel (JTAG) | — |
| MSL-Level | 3 (168 hours) | — |
| RoHS-Status | Compliant | Compliant |
| Logic Elements | — | 39,600 |
| Embedded Memory Bits | — | 1,161,216 |
| Embedded Memory (Kbytes) | — | 113 |
| M9K Memory Blocks | — | 126 |
| Logic Array Blocks (LABs) | — | 4,065 |
| Maximum User I/O Pins | — | 535 |
| PLLs | — | 4 |
| Core Voltage | — | 1.2 V |
| Package Height | — | 2.6 mm |
| Montageart | — | Surface Mount (FBGA) |
| Lead Free | — | Yes |
| Configuration Method | — | SRAM, JTAG via USB-Blaster |