EP3C40F780C7 vs EP3C40F780C6N 对比
详细并排对比 EP3C40F780C7 出自 Intel 和 EP3C40F780C6N 出自 Intel。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | EP3C40F780C7 | EP3C40F780C6N |
|---|---|---|
| 品牌 | Intel | Intel |
| 分类 | FPGA & CPLD | FPGA & CPLD |
| 生命周期状态 | 不推荐新设计 | 不推荐新设计 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $139.50 | $172.00 |
| Family | Cyclone III | Cyclone III |
| Logic Elements (LE) | 39,600 | — |
| Number of Logic Cells | 39,600 | — |
| Total Memory Bits | 1,161,216 bits | — |
| Embedded 18x18 Multipliers | 126 | — |
| Number of PLLs | 4 | — |
| User I/O Count | 535 | — |
| I/O Banks | 8 | — |
| 封装 | 780-ball FBGA (F780) | 780-ball FBGA (FineLine BGA) |
| Package Dimensions | 29 x 29 mm | 29 x 29 mm |
| Ball Pitch | 1.0 mm | 1.0 mm |
| Core Voltage (VCCINT) | 1.2 V | — |
| I/O Voltage (VCCIO) | 1.2 V to 3.3 V | — |
| 工作温度 | 0C to +85C (Commercial) | 0C to +85C (commercial) |
| Speed Grade | C7 | 6 (commercial) |
| Process Technology | 60 nm TSMC low-power CMOS | 60 nm CMOS |
| Configuration | Active Serial / Passive Parallel (JTAG) | — |
| MSL 等级 | 3 (168 hours) | — |
| RoHS 状态 | Compliant | Compliant |
| Logic Elements | — | 39,600 |
| Embedded Memory Bits | — | 1,161,216 |
| Embedded Memory (Kbytes) | — | 113 |
| M9K Memory Blocks | — | 126 |
| Logic Array Blocks (LABs) | — | 4,065 |
| Maximum User I/O Pins | — | 535 |
| PLLs | — | 4 |
| Core Voltage | — | 1.2 V |
| Package Height | — | 2.6 mm |
| 安装类型 | — | Surface Mount (FBGA) |
| Lead Free | — | Yes |
| Configuration Method | — | SRAM, JTAG via USB-Blaster |