EP3SE260F1152C3N vs EP3SE260F1152C4N Vergleich

Detaillierter Direktvergleich von EP3SE260F1152C3N von Intel und EP3SE260F1152C4N von Intel. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter EP3SE260F1152C3N EP3SE260F1152C4N
Marke Intel Intel
Kategorie FPGA & CPLD FPGA & CPLD
Lebenszyklusstatus Aktiv Obsolete
Lagerstatus In Stock In Stock
Stückpreis (USD) $7.500,00 $1.620,00
Series Stratix III E Stratix III E
Logic Elements / Cells 255,000 —
Embedded Memory Bits 16,672,768 bits —
Logic Array Blocks (LABs) 10,200 —
User I/O Count 744 —
Gehäuse 1152-BBGA, FCBGA 1152-ball FC-FBGA (flip-chip)
Montageart Surface Mount Surface Mount (BGA)
Process Technology 65 nm 65 nm CMOS
Core Voltage 1.1 V 1.1 V
Betriebstemperatur 0 C to +85 C (Commercial) 0C to +85C (commercial, 'C' suffix)
Transceivers Integrated high-speed transceivers —
DSP Blocks Yes (dedicated multiplier/accumulator) —
Embedded Memory Type TriMatrix (true dual-port, FIFO, ROM, RAM) —
External Memory Support DDR3, DDR2, QDR II+, RLDRAM II —
Configuration Modes AS, AP, PS, FPP, JTAG —
Partial Reconfiguration Supported —
Programmable Power Technology Yes (up to 50% dynamic power reduction) —
RoHS-Status Compliant —
Family — Stratix III (Enhanced)
Logic Elements (LEs) — 255,000
Embedded Memory — 16,672,768 bits (16.67 Mbit)
Maximum User I/Os — 744
Number of LABs/CLBs — 10,200
DSP / 18x18 Multipliers — 768 embedded multipliers
Maximum Operating Frequency — 450 MHz
Speed Grade — -4 (commercial temperature)
Packaging — Tray
Lead-Free / RoHS — Lead-free finish (RoHS compliant per distributor listing)
Speichertyp — SRAM-based, volatile (requires configuration device)
Configuration — External EPCS / enhanced configuration via AS, PS, JTAG, or FPP
Product Status — Obsolete (per Xecor cross-reference data)

Datenblätter & Ressourcen

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