EP3SE260F1152C4 vs EP3SE260F1152C3N Vergleich

Detaillierter Direktvergleich von EP3SE260F1152C4 von Intel und EP3SE260F1152C3N von Intel. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter EP3SE260F1152C4 EP3SE260F1152C3N
Marke Intel Intel
Kategorie FPGA & CPLD FPGA & CPLD
Lebenszyklusstatus NRND Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $8.900,00 $7.500,00
Series Stratix III E (Enhanced) Stratix III E
Family Stratix III —
Logic Elements (LE) 255,000 —
Logic Array Blocks (LABs) 10,200 10,200
Embedded Memory Bits 16,672,768 16,672,768 bits
User I/O Count 744 744
Process Technology 65 nm CMOS (TSMC) 65 nm
Core Voltage 1.1 V 1.1 V
Speed Grade C4 (slowest commercial grade) —
Maximum Internal Frequency ~450 MHz (per FPGAkey listing) —
Gehäuse 1152-pin FC-FBGA (Flip-Chip Fine-pitch BGA) 1152-BBGA, FCBGA
Package Code BGA, square —
I/O Standards Supported LVDS, LVTTL, LVCMOS, SSTL, HSTL —
Configuration Modes Passive Serial, Fast Passive Parallel, JTAG AS, AP, PS, FPP, JTAG
DSP Blocks (18x18 Multipliers) 384 —
PLL Count [DATA_NEEDED: PLL count] —
Transceivers External PHY interface only (no integrated GXB) Integrated high-speed transceivers
RoHS-Status Compliant (per distributor listings) Compliant
Betriebstemperatur Commercial (0C to +85C) - inferred from speed grade C4 0 C to +85 C (Commercial)
Montageart Surface Mount (BGA) Surface Mount
Logic Elements / Cells — 255,000
DSP Blocks — Yes (dedicated multiplier/accumulator)
Embedded Memory Type — TriMatrix (true dual-port, FIFO, ROM, RAM)
External Memory Support — DDR3, DDR2, QDR II+, RLDRAM II
Partial Reconfiguration — Supported
Programmable Power Technology — Yes (up to 50% dynamic power reduction)

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern