EP3SE50F780I4 vs EP3SE50F780C4N Vergleich
Detaillierter Direktvergleich von EP3SE50F780I4 von Altera und EP3SE50F780C4N von Intel. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Altera
EP3SE50F780I4 - Stratix III E FPGA, 47.5K LE, 780-FBGA | Intel / Altera
EP3SE50F780I4 ⚠ Letzte BestellmöglichkeitSpezifikationsvergleich
| Parameter | EP3SE50F780I4 | EP3SE50F780C4N |
|---|---|---|
| Marke | Altera | Intel |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | Letzte Kaufgelegenheit | NRND |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1.195,00 | $1.430,00 |
| Family | Stratix III E (Enhanced) | Stratix III E |
| Series | Stratix III | — |
| Logic Elements (LE) | 47,500 | 47,500 |
| Adaptive Logic Modules (ALMs) | 1,900 LABs | — |
| Total Memory | 5,760 Kbits | — |
| Embedded Memory Blocks | [DATA_NEEDED: block count and sizes] | — |
| Embedded Multipliers / DSP Blocks | [DATA_NEEDED: DSP block count] | — |
| Maximum User I/Os | 488 | 488 |
| User I/O Banks | [DATA_NEEDED: bank count] | — |
| Transceivers | [DATA_NEEDED: transceiver count and data rate] | — |
| Process Technology | 65 nm CMOS | — |
| Core Voltage | 1.1 V | — |
| Operating Temperature Grade | I4 (Industrial) | — |
| Gehäuse | 780-ball FC-FBGA | 780-Ball FBGA, 29 mm x 29 mm, 1.0 mm pitch |
| Montageart | Surface Mount (BGA) | Surface Mount (BGA) |
| RoHS-Status | [DATA_NEEDED] | Lead-free / RoHS compliant |
| Lead-Free | Yes (per Altera/Intel product page) | — |
| Embedded Memory Bits | — | 5,760,000 |
| Embedded Memory (M9K/M144K blocks) | — | 488 (per family datasheet) |
| Number of LABs | — | 1900 |
| DSP Blocks (18x18 multipliers) | — | 432 |
| PLLs | — | 12 (per family datasheet) |
| Maximum Operating Frequency | — | 717 MHz |
| Transceiver Channels | — | Up to 12 (per family, model-dependent) |
| Transceiver Data Rate | — | Up to 6.375 Gbps (per Stratix III E family) |
| Process Node | — | 40 nm |
| Versorgungsspannung | — | Core 0.9 V, I/O 1.2 V-3.3 V (multi-rail) |
| Betriebstemperatur | — | 0C to +85C (C4 commercial grade) |
| Configuration Modes | — | JTAG, Passive Serial, Fast Passive Parallel |
| MSL-Level | — | 3 (per JEDEC J-STD-020, FBGA package) |
| Hard Memory Controller | — | DDR2/DDR3 SDRAM (per Stratix III E family) |