EP3SE50F780I4 vs EP3SE50F780C4N Comparación
Comparación detallada lado a lado de EP3SE50F780I4 por Altera y EP3SE50F780C4N por Intel. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Altera
EP3SE50F780I4 - Stratix III E FPGA, 47.5K LE, 780-FBGA | Intel / Altera
EP3SE50F780I4 ⚠ Última compraComparación de especificaciones
| Parámetro | EP3SE50F780I4 | EP3SE50F780C4N |
|---|---|---|
| Marca | Altera | Intel |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Última compra | NRND |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1.195,00 | $1.430,00 |
| Family | Stratix III E (Enhanced) | Stratix III E |
| Series | Stratix III | — |
| Logic Elements (LE) | 47,500 | 47,500 |
| Adaptive Logic Modules (ALMs) | 1,900 LABs | — |
| Total Memory | 5,760 Kbits | — |
| Embedded Memory Blocks | [DATA_NEEDED: block count and sizes] | — |
| Embedded Multipliers / DSP Blocks | [DATA_NEEDED: DSP block count] | — |
| Maximum User I/Os | 488 | 488 |
| User I/O Banks | [DATA_NEEDED: bank count] | — |
| Transceivers | [DATA_NEEDED: transceiver count and data rate] | — |
| Process Technology | 65 nm CMOS | — |
| Core Voltage | 1.1 V | — |
| Operating Temperature Grade | I4 (Industrial) | — |
| Encapsulado | 780-ball FC-FBGA | 780-Ball FBGA, 29 mm x 29 mm, 1.0 mm pitch |
| Tipo de montaje | Surface Mount (BGA) | Surface Mount (BGA) |
| Estado RoHS | [DATA_NEEDED] | Lead-free / RoHS compliant |
| Lead-Free | Yes (per Altera/Intel product page) | — |
| Embedded Memory Bits | — | 5,760,000 |
| Embedded Memory (M9K/M144K blocks) | — | 488 (per family datasheet) |
| Number of LABs | — | 1900 |
| DSP Blocks (18x18 multipliers) | — | 432 |
| PLLs | — | 12 (per family datasheet) |
| Maximum Operating Frequency | — | 717 MHz |
| Transceiver Channels | — | Up to 12 (per family, model-dependent) |
| Transceiver Data Rate | — | Up to 6.375 Gbps (per Stratix III E family) |
| Process Node | — | 40 nm |
| Tensión de alimentación | — | Core 0.9 V, I/O 1.2 V-3.3 V (multi-rail) |
| Temperatura de funcionamiento | — | 0C to +85C (C4 commercial grade) |
| Configuration Modes | — | JTAG, Passive Serial, Fast Passive Parallel |
| Nivel MSL | — | 3 (per JEDEC J-STD-020, FBGA package) |
| Hard Memory Controller | — | DDR2/DDR3 SDRAM (per Stratix III E family) |