EP3SL50F780C4LN vs EP3SE50F780C4LN Vergleich

Detaillierter Direktvergleich von EP3SL50F780C4LN von Intel und EP3SE50F780C4LN von Intel. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter EP3SL50F780C4LN EP3SE50F780C4LN
Marke Intel Intel
Kategorie FPGA & CPLD FPGA & CPLD
Lebenszyklusstatus NRND Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $615,00 $650,00
Series Stratix III L —
Family Stratix III L (Low-Power) Stratix III E
Logic Elements (LE) 47,500 —
Logic Array Blocks (LAB) 1,900 —
Total RAM Bits 2,184,192 —
User I/O Pins 488 —
Gehäuse 780-BBGA, FCBGA (29x29 mm) 780-ball FC-FBGA
Montageart Surface Mount Surface Mount (BGA)
Process Technology 65 nm —
Core Voltage (VCCINT) 0.86 V to 1.15 V —
Betriebstemperatur 0C to +85C (Commercial) 0°C to 85°C (Commercial)
Speed Grade C4 C4
Lead-Free / RoHS Yes (LN suffix indicates lead-free, enhanced) Yes (L suffix)
MSL-Level [DATA_NEEDED: MSL moisture sensitivity level] —
Transceivers [DATA_NEEDED: number of integrated transceivers for F780 package] —
DSP Blocks [DATA_NEEDED: 18x18 multiplier count for EP3SL50] Yes (embedded multipliers)
Configuration SRAM-based, configured via Quartus II —
Logic Elements — 47,500
LABs (Logic Array Blocks) — 1,900
Embedded Memory — 5,760,000 bits
User I/Os — 488
Process Node — 65 nm
Core Voltage — 0.9 V
Maximum Toggle Frequency — 375 MHz
Configuration Modes — Passive Serial, Fast Passive, Active Serial (AS), Active Parallel (AP), JTAG
Block RAM Type — M9K + M144K
Memory Architecture — SRAM-based, reprogrammable
RoHS-Status — Compliant

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern