EP4CE115F23I7N vs EP4CGX110DF23I7N Vergleich
Detaillierter Direktvergleich von EP4CE115F23I7N von Intel und EP4CGX110DF23I7N von Intel. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | EP4CE115F23I7N | EP4CGX110DF23I7N |
|---|---|---|
| Marke | Intel | Intel |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $87,95 | $182,00 |
| Series | Cyclone IV E | — |
| Family | EP4CE115 (F23 package) | Cyclone IV GX |
| Logic Elements (LE) | 114,480 | — |
| Embedded Memory Bits | 3,981,312 bits | — |
| Maximum User I/Os | 280 | — |
| Logic Array Blocks (LABs) | 7,180 | 6,839 |
| Number of PLLs | 4 | — |
| 18x18 Hardware Multipliers | 266 | — |
| Core Voltage | 1.0 V / 1.2 V | — |
| I/O Voltage Banks | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V | — |
| Betriebstemperatur | -40C to +100C (Industrial) | -40C to +100C (industrial) |
| Gehäuse | 484-FBGA (F23) 23x23 mm, 1.0 mm pitch | 484-ball FBGA, 23 x 23 mm, 1.00 mm pitch |
| Montageart | Surface Mount | Surface Mount |
| Process Technology | 60 nm low-power CMOS (TSMC) | 60 nm low-power CMOS |
| Configuration Method | JTAG, Active Serial, Active Parallel | — |
| MSL-Level | 3 | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Logic Elements | — | 109,424 |
| User I/O Pins | — | 270 |
| Embedded Memory | — | 4.4 Mbits (approximate) |
| Embedded 18x18 Multipliers | — | 56 |
| Transceivers | — | Up to 3.125 Gbps embedded transceivers |
| Core Supply Voltage (VCCINT) | — | 1.15 V to 1.25 V (nominal 1.2 V) |
| Speed Grade | — | 7 |
| Package Code | — | BGA (FBGA) |
| Configuration Memory | — | SRAM-based (volatile, requires external config device) |