EP4CE115F23I7N vs EP4CGX110DF23I7N 对比
详细并排对比 EP4CE115F23I7N 出自 Intel 和 EP4CGX110DF23I7N 出自 Intel。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | EP4CE115F23I7N | EP4CGX110DF23I7N |
|---|---|---|
| 品牌 | Intel | Intel |
| 分类 | FPGA & CPLD | FPGA & CPLD |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $87.95 | $182.00 |
| Series | Cyclone IV E | — |
| Family | EP4CE115 (F23 package) | Cyclone IV GX |
| Logic Elements (LE) | 114,480 | — |
| Embedded Memory Bits | 3,981,312 bits | — |
| Maximum User I/Os | 280 | — |
| Logic Array Blocks (LABs) | 7,180 | 6,839 |
| Number of PLLs | 4 | — |
| 18x18 Hardware Multipliers | 266 | — |
| Core Voltage | 1.0 V / 1.2 V | — |
| I/O Voltage Banks | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V | — |
| 工作温度 | -40C to +100C (Industrial) | -40C to +100C (industrial) |
| 封装 | 484-FBGA (F23) 23x23 mm, 1.0 mm pitch | 484-ball FBGA, 23 x 23 mm, 1.00 mm pitch |
| 安装类型 | Surface Mount | Surface Mount |
| Process Technology | 60 nm low-power CMOS (TSMC) | 60 nm low-power CMOS |
| Configuration Method | JTAG, Active Serial, Active Parallel | — |
| MSL 等级 | 3 | — |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Logic Elements | — | 109,424 |
| User I/O Pins | — | 270 |
| Embedded Memory | — | 4.4 Mbits (approximate) |
| Embedded 18x18 Multipliers | — | 56 |
| Transceivers | — | Up to 3.125 Gbps embedded transceivers |
| Core Supply Voltage (VCCINT) | — | 1.15 V to 1.25 V (nominal 1.2 V) |
| Speed Grade | — | 7 |
| Package Code | — | BGA (FBGA) |
| Configuration Memory | — | SRAM-based (volatile, requires external config device) |