EPF10K250EGC599-1 vs EPF10K200EGC599-3 Vergleich
Detaillierter Direktvergleich von EPF10K250EGC599-1 von Intel und EPF10K200EGC599-3 von Altera. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Altera
EPF10K200EGC599-3 - FLEX 10KE 200K FPGA, 599-BCPGA | Altera
EPF10K200EGC599-3 ⚠ Letzte BestellmöglichkeitSpezifikationsvergleich
| Parameter | EPF10K250EGC599-1 | EPF10K200EGC599-3 |
|---|---|---|
| Marke | Intel | Altera |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | NRND | Letzte Kaufgelegenheit |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $162,00 | $39,20 |
| Product Type | FPGA (Field-Programmable Gate Array) | — |
| Series | FLEX 10K | FLEX-10KE |
| Logic Elements | 40,960 | 9984 |
| Equivalent Gates | 250,000 | — |
| Flip-Flops | 12,160 | — |
| User I/O Pins | 470 | — |
| Embedded Array Blocks (EAB) | 20 (2 Kbit each) | — |
| Gehäuse | 599-BPGA / HIPGA-599 (Ceramic Pin Grid Array) | 599-BCPGA (62.48 x 62.48 mm) |
| Pin-Anzahl | 599 | — |
| Betriebstemperatur | 0C to +70C (Commercial) | — |
| Montageart | Through-Hole (PGA) | Through Hole (Pin/Peg) |
| Configuration | SRAM (volatile), serial/parallel EPROM | — |
| Process Node | 0.42 µm CMOS | — |
| I/O Standard Support | 5.0 V PCI, LVTTL, LVCMOS | — |
| Programming Interface | JTAG (IEEE 1149.1), passive serial | JTAG (IEEE 1149.1) |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | — |
| RoHS-Status | unknown (ceramic HIPGA package historically non-RoHS) | — |
| Manufacturer | — | Altera (Intel) |
| Family | — | FLEX 10KE |
| Device Type | — | FPGA (Field Programmable Gate Array) |
| System Gates | — | 200000 (approx.) |
| Total RAM Bits | — | 98304 |
| Maximum User I/O | — | 470 |
| Number of Terminals | — | 599 |
| Package Code | — | PGA (Ceramic Pin Grid Array) |
| Operating Temperature Grade | — | Commercial |
| Core Supply Voltage | — | 2.375 V to 2.625 V (typical 2.5 V) |
| Process Technology | — | 0.22 µm SRAM CMOS |
| Maximum Frequency | — | 166.67 MHz |
| Speed Grade | — | -3 (0.8 ns) |
| Propagation Delay | — | 0.8 ns |
| Configuration Memory | — | SRAM-based (volatile) |