EPF10K250EGC599-1 vs EPF10K200EGC599-3 Comparación
Comparación detallada lado a lado de EPF10K250EGC599-1 por Intel y EPF10K200EGC599-3 por Altera. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Altera
EPF10K200EGC599-3 - FLEX 10KE 200K FPGA, 599-BCPGA | Altera
EPF10K200EGC599-3 ⚠ Última compraComparación de especificaciones
| Parámetro | EPF10K250EGC599-1 | EPF10K200EGC599-3 |
|---|---|---|
| Marca | Intel | Altera |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | NRND | Última compra |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $162,00 | $39,20 |
| Product Type | FPGA (Field-Programmable Gate Array) | — |
| Series | FLEX 10K | FLEX-10KE |
| Logic Elements | 40,960 | 9984 |
| Equivalent Gates | 250,000 | — |
| Flip-Flops | 12,160 | — |
| User I/O Pins | 470 | — |
| Embedded Array Blocks (EAB) | 20 (2 Kbit each) | — |
| Encapsulado | 599-BPGA / HIPGA-599 (Ceramic Pin Grid Array) | 599-BCPGA (62.48 x 62.48 mm) |
| Recuento de pines | 599 | — |
| Temperatura de funcionamiento | 0C to +70C (Commercial) | — |
| Tipo de montaje | Through-Hole (PGA) | Through Hole (Pin/Peg) |
| Configuration | SRAM (volatile), serial/parallel EPROM | — |
| Process Node | 0.42 µm CMOS | — |
| I/O Standard Support | 5.0 V PCI, LVTTL, LVCMOS | — |
| Programming Interface | JTAG (IEEE 1149.1), passive serial | JTAG (IEEE 1149.1) |
| Nivel MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Estado RoHS | unknown (ceramic HIPGA package historically non-RoHS) | — |
| Manufacturer | — | Altera (Intel) |
| Family | — | FLEX 10KE |
| Device Type | — | FPGA (Field Programmable Gate Array) |
| System Gates | — | 200000 (approx.) |
| Total RAM Bits | — | 98304 |
| Maximum User I/O | — | 470 |
| Number of Terminals | — | 599 |
| Package Code | — | PGA (Ceramic Pin Grid Array) |
| Operating Temperature Grade | — | Commercial |
| Core Supply Voltage | — | 2.375 V to 2.625 V (typical 2.5 V) |
| Process Technology | — | 0.22 µm SRAM CMOS |
| Maximum Frequency | — | 166.67 MHz |
| Speed Grade | — | -3 (0.8 ns) |
| Propagation Delay | — | 0.8 ns |
| Configuration Memory | — | SRAM-based (volatile) |