H5AN4G8NBJR-PBC vs H5AN4G8NBJR-UHI Vergleich
Detaillierter Direktvergleich von H5AN4G8NBJR-PBC von SK hynix und H5AN4G8NBJR-UHI von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5AN4G8NBJR-PBC | H5AN4G8NBJR-UHI |
|---|---|---|
| Marke | SK hynix | SK hynix |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,20 | $2,25 |
| Memory Density | 4 Gbit | — |
| Speicherorganisation | 512M x 8 | 512M x 8 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Schnittstellentyp | Parallel, JEDEC DDR4 | — |
| Supply Voltage VDD | 1.2 V | — |
| Supply Voltage VDDQ | 1.2 V | — |
| Speed Grade | PBC | DDR4-2400 (PC4-19200) |
| Clock Frequency | [DATA_NEEDED: Clock Frequency] | — |
| CAS Latency (CL) | [DATA_NEEDED: CAS Latency] | — |
| Gehäuse | 78-ball FBGA | FBGA-78 (78-ball fine-pitch BGA) |
| Montageart | Surface Mount | Surface Mount |
| Normal Operating Case Temperature | 0C to 85C | — |
| Extended Temperature Range | up to 95C case (with increased refresh) | — |
| Lead Free | Yes | — |
| Halogenfrei | Yes | — |
| Refresh | 8n prefetch, standard/auto refresh per DDR4 JEDEC | Self-refresh and auto-refresh support |
| Density | — | 4 Gbit |
| Supply Voltage (VDD) | — | 1.2 V |
| Grade | — | Industrial (-UHI suffix) |
| Datenrate | — | 2400 MT/s |
| Schnittstelle | — | JEDEC DDR4 SDRAM |
| Bank Architecture | — | DDR4 bank group architecture |
| Termination | — | On-die termination (ODT) |
| Betriebstemperatur | — | [DATA_NEEDED: operating temperature range] |
| CAS-Latenz | — | [DATA_NEEDED: CAS latency at DDR4-2400] |
| RoHS-Status | — | [DATA_NEEDED: RoHS status] |
| MSL-Level | — | [DATA_NEEDED: moisture sensitivity level] |