H5AN4G8NBJR-VKIR vs H5AN4G8NBJR-PBC Vergleich
Detaillierter Direktvergleich von H5AN4G8NBJR-VKIR von SK hynix und H5AN4G8NBJR-PBC von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5AN4G8NBJR-VKIR | H5AN4G8NBJR-PBC |
|---|---|---|
| Marke | SK hynix | SK hynix |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,98 | $2,20 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gb | — |
| Speicherorganisation | 512M x 8 | 512M x 8 |
| Datenrate | 2666 Mbps per pin | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Gehäuse | 78-ball FBGA | 78-ball FBGA |
| Montageart | Surface Mount | Surface Mount |
| Operating Temperature (Industrial) | -40C to +85C (case) | — |
| Extended Temperature Range | +85C to +95C (case, per datasheet conditions) | up to 95C case (with increased refresh) |
| Technology | CMOS DRAM | — |
| Product Family | H5AN4G4/6/8NBJR series | — |
| Speed Grade Code | -VKI | — |
| Packing Suffix | R (Tape & Reel) | — |
| VPP Supply | [DATA_NEEDED: VPP supply voltage] | — |
| CAS-Latenz | [DATA_NEEDED: CAS latency] | — |
| Package Dimensions | [DATA_NEEDED: package dimensions] | — |
| Refresh | [DATA_NEEDED: refresh interval specification] | 8n prefetch, standard/auto refresh per DDR4 JEDEC |
| Memory Density | — | 4 Gbit |
| Schnittstellentyp | — | Parallel, JEDEC DDR4 |
| Supply Voltage VDD | — | 1.2 V |
| Supply Voltage VDDQ | — | 1.2 V |
| Speed Grade | — | PBC |
| Clock Frequency | — | [DATA_NEEDED: Clock Frequency] |
| CAS Latency (CL) | — | [DATA_NEEDED: CAS Latency] |
| Normal Operating Case Temperature | — | 0C to 85C |
| Lead Free | — | Yes |
| Halogenfrei | — | Yes |