H5AN4G8NBJR-VKIR vs H5AN4G8NBJR-PBC Comparación
Comparación detallada lado a lado de H5AN4G8NBJR-VKIR por SK hynix y H5AN4G8NBJR-PBC por SK hynix. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | H5AN4G8NBJR-VKIR | H5AN4G8NBJR-PBC |
|---|---|---|
| Marca | SK hynix | SK hynix |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,98 | $2,20 |
| Tipo de memoria | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gb | — |
| Organización de memoria | 512M x 8 | 512M x 8 |
| Velocidad de datos | 2666 Mbps per pin | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Encapsulado | 78-ball FBGA | 78-ball FBGA |
| Tipo de montaje | Surface Mount | Surface Mount |
| Operating Temperature (Industrial) | -40C to +85C (case) | — |
| Extended Temperature Range | +85C to +95C (case, per datasheet conditions) | up to 95C case (with increased refresh) |
| Technology | CMOS DRAM | — |
| Product Family | H5AN4G4/6/8NBJR series | — |
| Speed Grade Code | -VKI | — |
| Packing Suffix | R (Tape & Reel) | — |
| VPP Supply | [DATA_NEEDED: VPP supply voltage] | — |
| Latencia CAS | [DATA_NEEDED: CAS latency] | — |
| Package Dimensions | [DATA_NEEDED: package dimensions] | — |
| Refresh | [DATA_NEEDED: refresh interval specification] | 8n prefetch, standard/auto refresh per DDR4 JEDEC |
| Memory Density | — | 4 Gbit |
| Tipo de interfaz | — | Parallel, JEDEC DDR4 |
| Supply Voltage VDD | — | 1.2 V |
| Supply Voltage VDDQ | — | 1.2 V |
| Speed Grade | — | PBC |
| Clock Frequency | — | [DATA_NEEDED: Clock Frequency] |
| CAS Latency (CL) | — | [DATA_NEEDED: CAS Latency] |
| Normal Operating Case Temperature | — | 0C to 85C |
| Lead Free | — | Yes |
| Sin halógenos | — | Yes |