H5AN8G8NAFR-VKC vs H5AN8G8NAFR-UHI Vergleich
Detaillierter Direktvergleich von H5AN8G8NAFR-VKC von SK hynix und H5AN8G8NAFR-UHI von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5AN8G8NAFR-VKC | H5AN8G8NAFR-UHI |
|---|---|---|
| Marke | SK hynix | SK hynix |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $4,15 | $4,10 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Speicherorganisation | 1G x 8 | 1G x 8 |
| Speed Grade | DDR4-2666 (VKC bin) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Schnittstelle | SSTL12 | DDR4 (JEDEC-class) |
| Burst Length | 8 (BL8) | — |
| Bank Group Architecture | Supported (per DDR4 JEDEC architecture) | — |
| On-Die Termination (ODT) | Yes | — |
| DLL | Yes (DLL for output skew control) | — |
| Gehäuse | 78-ball FBGA | 78-ball FBGA |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| RoHS-Status | Compliant (Lead-Free & Halogen-Free) | Compliant |
| Process Technology | CMOS | — |
| Recommended Application | Main memory requiring large density and high bandwidth | — |
| Memory Density | — | 8 Gb |
| Datenrate | — | DDR4-2400 (PC2400), 1200 MHz clock |
| Versorgungsspannung | — | 1.2 V |
| Lead Free | — | Yes |
| Halogenfrei | — | Yes |
| Technology | — | CMOS |
| Application | — | Main memory (high density, high bandwidth) |
| CAS-Latenz | — | [DATA_NEEDED: CAS latency for UHI speed grade] |
| Refresh | — | [DATA_NEEDED: refresh specification] |
| MSL-Level | — | [DATA_NEEDED: moisture sensitivity level] |