H5AN8G8NAFR-VKC vs H5AN8G8NAFR-UHI 对比

详细并排对比 H5AN8G8NAFR-VKC 出自 SK hynix 和 H5AN8G8NAFR-UHI 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN8G8NAFR-VKC H5AN8G8NAFR-VKC - 8Gb DDR4-2666 SDRAM 1.2V | SK hynix

H5AN8G8NAFR-VKC - 8Gb DDR4-2666 SDRAM 1.2V | SK hynix

H5AN8G8NAFR-VKC ✓ 量产中
SK hynix
H5AN8G8NAFR-UHI H5AN8G8NAFR-UHI - 8Gb DDR4-2400 x8 SDRAM | SK Hynix

H5AN8G8NAFR-UHI - 8Gb DDR4-2400 x8 SDRAM | SK Hynix

H5AN8G8NAFR-UHI ✓ 量产中

规格对比

参数 H5AN8G8NAFR-VKC H5AN8G8NAFR-UHI
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $4.15 $4.10
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 8 Gb —
存储组织 1G x 8 1G x 8
Speed Grade DDR4-2666 (VKC bin) —
Supply Voltage (VDD) 1.2 V —
接口 SSTL12 DDR4 (JEDEC-class)
Burst Length 8 (BL8) —
Bank Group Architecture Supported (per DDR4 JEDEC architecture) —
On-Die Termination (ODT) Yes —
DLL Yes (DLL for output skew control) —
封装 78-ball FBGA 78-ball FBGA
安装类型 Surface Mount Surface Mount
工作温度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
RoHS 状态 Compliant (Lead-Free & Halogen-Free) Compliant
Process Technology CMOS —
Recommended Application Main memory requiring large density and high bandwidth —
Memory Density — 8 Gb
数据速率 — DDR4-2400 (PC2400), 1200 MHz clock
电源电压 — 1.2 V
Lead Free — Yes
无卤 — Yes
Technology — CMOS
Application — Main memory (high density, high bandwidth)
CAS 延迟 — [DATA_NEEDED: CAS latency for UHI speed grade]
Refresh — [DATA_NEEDED: refresh specification]
MSL 等级 — [DATA_NEEDED: moisture sensitivity level]

数据手册与资源

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