H5AN8G8NAFR-VKC vs H5AN8G8NCJR-PBC Vergleich
Detaillierter Direktvergleich von H5AN8G8NAFR-VKC von SK hynix und H5AN8G8NCJR-PBC von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5AN8G8NAFR-VKC | H5AN8G8NCJR-PBC |
|---|---|---|
| Marke | SK hynix | SK hynix |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $4,15 | $2,40 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Speicherorganisation | 1G x 8 | 1G x 8 (x8) |
| Speed Grade | DDR4-2666 (VKC bin) | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Schnittstelle | SSTL12 | — |
| Burst Length | 8 (BL8) | BL8 |
| Bank Group Architecture | Supported (per DDR4 JEDEC architecture) | — |
| On-Die Termination (ODT) | Yes | — |
| DLL | Yes (DLL for output skew control) | — |
| Gehäuse | 78-ball FBGA | 78-ball FBGA |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| RoHS-Status | Compliant (Lead-Free & Halogen-Free) | Lead-Free & Halogen-Free |
| Process Technology | CMOS | — |
| Recommended Application | Main memory requiring large density and high bandwidth | — |
| Speichergröße | — | 8 Gb (1 GB) |
| Interface Voltage (VDDQ) | — | 1.2 V (SSTL12) |
| Datenrate | — | [DATA_NEEDED: data rate for -PBC speed grade (Mbps/MT/s)] |
| Architecture | — | CMOS, fully synchronous, dual-edge clocked |
| Bank Structure | — | 8 internal banks, bank-group architecture |
| Eigenschaften | — | ODT, DM, DQS strobes, programmable CAS latency, self-refresh |
| Die Revision Family | — | CJR (H5AN8G8NCJR-xxC) |
| Refresh | — | Auto-refresh and self-refresh |
| Typical Applications | — | PC/server main memory, embedded solder-down memory |