H5AN8G8NCJR-PBC vs H5AN8G8NCJR-UHC Vergleich

Detaillierter Direktvergleich von H5AN8G8NCJR-PBC von SK hynix und H5AN8G8NCJR-UHC von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

SK hynix
H5AN8G8NCJR-PBC H5AN8G8NCJR-PBC - 8Gb DDR4 SDRAM, 1.2V | SK Hynix

H5AN8G8NCJR-PBC - 8Gb DDR4 SDRAM, 1.2V | SK Hynix

H5AN8G8NCJR-PBC ✓ Aktiv

Spezifikationsvergleich

Parameter H5AN8G8NCJR-PBC H5AN8G8NCJR-UHC
Marke SK hynix SK hynix
Kategorie Memory ICs Memory ICs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $2,40 $2,88
Speichertyp DDR4 SDRAM DDR4 SDRAM
Speichergröße 8 Gb (1 GB) —
Speicherorganisation 1G x 8 (x8) 1G x 8
Supply Voltage (VDD) 1.2 V 1.2 V
Interface Voltage (VDDQ) 1.2 V (SSTL12) —
Datenrate [DATA_NEEDED: data rate for -PBC speed grade (Mbps/MT/s)] —
Gehäuse 78-ball FBGA FBGA-78
Montageart Surface Mount Surface Mount (BGA)
Architecture CMOS, fully synchronous, dual-edge clocked —
Bank Structure 8 internal banks, bank-group architecture —
Burst Length BL8 —
Eigenschaften ODT, DM, DQS strobes, programmable CAS latency, self-refresh —
Die Revision Family CJR (H5AN8G8NCJR-xxC) —
RoHS-Status Lead-Free & Halogen-Free —
Betriebstemperatur [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Refresh Auto-refresh and self-refresh —
Typical Applications PC/server main memory, embedded solder-down memory —
Density — 8 Gb
Speed Grade — DDR4-2400 (PC4-19200)
RoHS Code — Yes
REACH Compliance — Yes (per distributor record)
Lead-Free — Yes (family documented as Lead-Free & Halogen-Free)
Halogenfrei — Yes
Part Life Cycle Code — Active
Access Type — Synchronous, both clock edges (DDR)
Memory Configuration — Bank-group architecture DDR4
Die Revision — CJR (C-die family)
Manufacturer — SK hynix Inc.

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