H5AN8G8NCJR-PBC vs H5AN8G8NCJR-UHC 对比

详细并排对比 H5AN8G8NCJR-PBC 出自 SK hynix 和 H5AN8G8NCJR-UHC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN8G8NCJR-PBC H5AN8G8NCJR-PBC - 8Gb DDR4 SDRAM, 1.2V | SK Hynix

H5AN8G8NCJR-PBC - 8Gb DDR4 SDRAM, 1.2V | SK Hynix

H5AN8G8NCJR-PBC ✓ 量产中
SK hynix
H5AN8G8NCJR-UHC H5AN8G8NCJR-UHC - 8Gb DDR4-2400 SDRAM FBGA-78 | SK hynix

H5AN8G8NCJR-UHC - 8Gb DDR4-2400 SDRAM FBGA-78 | SK hynix

H5AN8G8NCJR-UHC ✓ 量产中

规格对比

参数 H5AN8G8NCJR-PBC H5AN8G8NCJR-UHC
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.40 $2.88
存储器类型 DDR4 SDRAM DDR4 SDRAM
存储容量 8 Gb (1 GB) —
存储组织 1G x 8 (x8) 1G x 8
Supply Voltage (VDD) 1.2 V 1.2 V
Interface Voltage (VDDQ) 1.2 V (SSTL12) —
数据速率 [DATA_NEEDED: data rate for -PBC speed grade (Mbps/MT/s)] —
封装 78-ball FBGA FBGA-78
安装类型 Surface Mount Surface Mount (BGA)
Architecture CMOS, fully synchronous, dual-edge clocked —
Bank Structure 8 internal banks, bank-group architecture —
Burst Length BL8 —
特性 ODT, DM, DQS strobes, programmable CAS latency, self-refresh —
Die Revision Family CJR (H5AN8G8NCJR-xxC) —
RoHS 状态 Lead-Free & Halogen-Free —
工作温度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Refresh Auto-refresh and self-refresh —
Typical Applications PC/server main memory, embedded solder-down memory —
Density — 8 Gb
Speed Grade — DDR4-2400 (PC4-19200)
RoHS Code — Yes
REACH Compliance — Yes (per distributor record)
Lead-Free — Yes (family documented as Lead-Free & Halogen-Free)
无卤 — Yes
Part Life Cycle Code — Active
Access Type — Synchronous, both clock edges (DDR)
Memory Configuration — Bank-group architecture DDR4
Die Revision — CJR (C-die family)
Manufacturer — SK hynix Inc.

数据手册与资源

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