H5AN8G8NCJR-PBC vs K4A8G165WC-BCRC Vergleich
Detaillierter Direktvergleich von H5AN8G8NCJR-PBC von SK hynix und K4A8G165WC-BCRC von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5AN8G8NCJR-PBC | K4A8G165WC-BCRC |
|---|---|---|
| Marke | SK hynix | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,40 | $23,00 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Speichergröße | 8 Gb (1 GB) | — |
| Speicherorganisation | 1G x 8 (x8) | 512M x 16 |
| Supply Voltage (VDD) | 1.2 V | 1.2 V (1.14V to 1.26V) |
| Interface Voltage (VDDQ) | 1.2 V (SSTL12) | — |
| Datenrate | [DATA_NEEDED: data rate for -PBC speed grade (Mbps/MT/s)] | 2400 Mbps |
| Gehäuse | 78-ball FBGA | 96-ball FBGA (9mm x 13mm) |
| Montageart | Surface Mount | Surface Mount |
| Architecture | CMOS, fully synchronous, dual-edge clocked | — |
| Bank Structure | 8 internal banks, bank-group architecture | — |
| Burst Length | BL8 | 8 (BL8) |
| Eigenschaften | ODT, DM, DQS strobes, programmable CAS latency, self-refresh | — |
| Die Revision Family | CJR (H5AN8G8NCJR-xxC) | — |
| RoHS-Status | Lead-Free & Halogen-Free | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | 0°C to +95°C (case) |
| Refresh | Auto-refresh and self-refresh | Temperature-compensated self-refresh (TCSR) |
| Typical Applications | PC/server main memory, embedded solder-down memory | — |
| Density | — | 8 Gb |
| VPP Voltage | — | 2.5 V |
| Schnittstelle | — | 16-bit I/O |
| Banks | — | 16 (4 bank groups) |
| CAS-Latenz | — | Programmable (e.g., 16, 17, 18) |
| RoHS | — | Compliant |