H5AN8G8NCJR-PBC vs K4A8G165WC-BCRC 对比
详细并排对比 H5AN8G8NCJR-PBC 出自 SK hynix 和 K4A8G165WC-BCRC 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5AN8G8NCJR-PBC | K4A8G165WC-BCRC |
|---|---|---|
| 品牌 | SK hynix | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.40 | $23.00 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 8 Gb (1 GB) | — |
| 存储组织 | 1G x 8 (x8) | 512M x 16 |
| Supply Voltage (VDD) | 1.2 V | 1.2 V (1.14V to 1.26V) |
| Interface Voltage (VDDQ) | 1.2 V (SSTL12) | — |
| 数据速率 | [DATA_NEEDED: data rate for -PBC speed grade (Mbps/MT/s)] | 2400 Mbps |
| 封装 | 78-ball FBGA | 96-ball FBGA (9mm x 13mm) |
| 安装类型 | Surface Mount | Surface Mount |
| Architecture | CMOS, fully synchronous, dual-edge clocked | — |
| Bank Structure | 8 internal banks, bank-group architecture | — |
| Burst Length | BL8 | 8 (BL8) |
| 特性 | ODT, DM, DQS strobes, programmable CAS latency, self-refresh | — |
| Die Revision Family | CJR (H5AN8G8NCJR-xxC) | — |
| RoHS 状态 | Lead-Free & Halogen-Free | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | 0°C to +95°C (case) |
| Refresh | Auto-refresh and self-refresh | Temperature-compensated self-refresh (TCSR) |
| Typical Applications | PC/server main memory, embedded solder-down memory | — |
| Density | — | 8 Gb |
| VPP Voltage | — | 2.5 V |
| 接口 | — | 16-bit I/O |
| Banks | — | 16 (4 bank groups) |
| CAS 延迟 | — | Programmable (e.g., 16, 17, 18) |
| RoHS | — | Compliant |