H5AN8G8NCJR-RDC vs H5AN8G8NCJR-PBC Vergleich
Detaillierter Direktvergleich von H5AN8G8NCJR-RDC von SK hynix und H5AN8G8NCJR-PBC von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5AN8G8NCJR-RDC | H5AN8G8NCJR-PBC |
|---|---|---|
| Marke | SK hynix | SK hynix |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,70 | $2,40 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb (1 GB) | — |
| Speicherorganisation | x8 | 1G x 8 (x8) |
| Datenrate | up to 2666 Mbps | [DATA_NEEDED: data rate for -PBC speed grade (Mbps/MT/s)] |
| Versorgungsspannung | 1.2 V (VDD) | — |
| Schnittstelle | DDR4 (JEDEC standard) | — |
| Bank Architecture | 4 bank groups x 4 banks | — |
| Burst Length | BL8 | BL8 |
| Gehäuse | 78-ball FBGA | 78-ball FBGA |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range for -RDC suffix] | [DATA_NEEDED: operating temperature range] |
| CAS-Latenz | [DATA_NEEDED: CAS latency for -RDC speed grade] | — |
| Generation | C-die family (NCJR) | — |
| Lead Free | Yes | — |
| Halogenfrei | Yes | — |
| RoHS-Status | Compliant | Lead-Free & Halogen-Free |
| Speichergröße | — | 8 Gb (1 GB) |
| Supply Voltage (VDD) | — | 1.2 V |
| Interface Voltage (VDDQ) | — | 1.2 V (SSTL12) |
| Architecture | — | CMOS, fully synchronous, dual-edge clocked |
| Bank Structure | — | 8 internal banks, bank-group architecture |
| Eigenschaften | — | ODT, DM, DQS strobes, programmable CAS latency, self-refresh |
| Die Revision Family | — | CJR (H5AN8G8NCJR-xxC) |
| Refresh | — | Auto-refresh and self-refresh |
| Typical Applications | — | PC/server main memory, embedded solder-down memory |