H5AN8G8NCJR-VKI vs H5AN8G8NCJR-PBC Vergleich
Detaillierter Direktvergleich von H5AN8G8NCJR-VKI von SK hynix und H5AN8G8NCJR-PBC von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5AN8G8NCJR-VKI | H5AN8G8NCJR-PBC |
|---|---|---|
| Marke | SK hynix | SK hynix |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $4,85 | $2,40 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Speichergröße | 8 Gb | 8 Gb (1 GB) |
| Memory Organization | 1G x8 | — |
| Datenrate | 2666 Mbps | [DATA_NEEDED: data rate for -PBC speed grade (Mbps/MT/s)] |
| Versorgungsspannung | 1.2 V | — |
| Schnittstelle | Parallel | — |
| Memory Format | DRAM | — |
| Volatile | Yes | — |
| Gehäuse | FBGA-78 | 78-ball FBGA |
| Montageart | Surface Mount | Surface Mount |
| Grade | Industrial (I suffix) | — |
| Betriebstemperatur | [DATA_NEEDED: Operating Temperature] | [DATA_NEEDED: operating temperature range] |
| Technology | CMOS | — |
| Product Family | H5AN8G8NCJR-xxC/xI DDR4 SDRAM | — |
| Packaging | Tray | — |
| Product Status | Active | — |
| RoHS-Status | [DATA_NEEDED: RoHS Status] | Lead-Free & Halogen-Free |
| Speicherorganisation | — | 1G x 8 (x8) |
| Supply Voltage (VDD) | — | 1.2 V |
| Interface Voltage (VDDQ) | — | 1.2 V (SSTL12) |
| Architecture | — | CMOS, fully synchronous, dual-edge clocked |
| Bank Structure | — | 8 internal banks, bank-group architecture |
| Burst Length | — | BL8 |
| Eigenschaften | — | ODT, DM, DQS strobes, programmable CAS latency, self-refresh |
| Die Revision Family | — | CJR (H5AN8G8NCJR-xxC) |
| Refresh | — | Auto-refresh and self-refresh |
| Typical Applications | — | PC/server main memory, embedded solder-down memory |