H5ANAG4NBJR-RDC vs MT40A2G8AG-062E Vergleich
Detaillierter Direktvergleich von H5ANAG4NBJR-RDC von SK hynix und MT40A2G8AG-062E von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5ANAG4NBJR-RDC | MT40A2G8AG-062E |
|---|---|---|
| Marke | SK hynix | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $5,75 | $9,75 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gb (2 GB) | 16 Gbit |
| Speicherorganisation | 4G x 4 | 2G x 8 |
| Supply Voltage VDD | 1.2 V | 1.2 V |
| Datenrate | 2666 MT/s (speed bin NBJR, [DATA_NEEDED: exact MT/s confirmation from datasheet]) | — |
| Gehäuse | 78-ball FBGA | 78-FBGA (7.5 x 11 mm) |
| Montageart | Surface Mount | Surface Mount |
| Prefetch | 16n (bank group architecture) | — |
| Schnittstelle | SSTL-12 | — |
| Eigenschaften | Bank groups, CA parity, data CRC, ODT, DLL-off mode | — |
| Refresh | Self refresh, 8n refresh [DATA_NEEDED: 1x/2x/4x refresh option] | — |
| Operating Temperature (case) | -40C to +85C (industrial; extended to 95C per datasheet conditions) | — |
| Temperature Grade Suffix | RDC - industrial temperature, lead-free, halogen-free | — |
| RoHS-Status | Compliant (lead-free / halogen-free per RDC suffix) | Compliant |
| VDDQ | 1.2 V | — |
| Product Family | SK hynix computing 16Gb DDR4 H5ANAG4(8_6)NBJR series | — |
| Speed | — | DDR4-3200 (3200 MT/s) |
| Clock Frequency | — | 1600 MHz |
| Access Time (Clock Cycle Time) | — | 0.625 ns (tCK) |
| CAS-Latenz | — | CL22 (DDR4-3200) |
| Access Time | — | 19 ns |
| I/O Interface | — | POD12 (1.2 V pseudo-open drain) |
| VPP Voltage | — | 2.5 V |
| Number of Banks | — | 16 (4 bank groups x 4 banks) |
| Operating Temperature (AUT grade) | — | -40C to +95C (per Micron grade table) |
| Die Revision | — | AG (current generation) |