H5ANAG4NBJR-RDC - 16Gb DDR4 SDRAM 4Gx4 1.2V | SK hynix
Teilenummer: H5ANAG4NBJR-RDC ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $7.8 | $7,80 |
| 10 | $7.15 | $71,50 |
| 100 | $6.6 | $660,00 |
| 500 | $6.15 | $3.075,00 |
| 1.000 | $5.75 | $5.750,00 |
H5ANAG4NBJR-RDC Übersicht
DDR4 SDRAM (Double Data Rate Fourth Generation Synchronous DRAM) is the dominant class of volatile main memory in computing systems. A DDR4 device transfers data on both rising and falling edges of a differential clock (CK/CK#), is fully synchronous, and improves on DDR3 by lowering core voltage from 1.5V to 1.2V, adding bank groups (allowing faster burst accesses within a group structure), and introducing a DBI (data bus inversion), CA parity, and DLL-off mode. In the system hierarchy it sits as: DRAM -> DDR4 SDRAM -> main memory -> memory subsystem.
Key features of the H5ANAG4NBJR family include 16-bit prefetch architecture with bank-group operation, on-die termination (ODT), DLL and DLL-off modes, CA parity for command/address integrity, and data CRC for write data reliability. The -RDC suffix denotes lead-free, halogen-free construction with industrial temperature support; SK hynix consumer/industrial DDR4 datasheets specify case-temperature operation from -40C up to 85C (with extended operation to 95C under specified refresh conditions), making the RDC grade suitable for industrial and networking environments beyond standard commercial limits.
The device supports programmable CAS latency, additive latency, burst lengths of 8 (BL8) with MRS-programmable options, and self-refresh with self-refresh entry/exit for low-power standby. Per SK hynix product information, the 16Gb DDR4 family delivers up to 3200MT/s in faster bins while consuming roughly 20% less operating voltage than DDR3, and the H5ANAG4(8_6)NBJR computing series is documented for main-memory applications requiring large density and high bandwidth.
Typical applications include desktop and notebook DIMMs (UDIMM/SODIMM), embedded and industrial control memory, networking routers and switches, gaming consoles, and set-top boxes where a single 16Gb x4 component provides 2GB of memory per device.
Design consideration: DDR4 x4 devices require careful fly-by routing of CK/CA on multi-rank boards, per-byte DQS/DQ termination via ODT, and adherence to the JEDEC DDR4 78-ball FBGA footprint for land-pattern compatibility.
This page synthesizes verified distributor data, same-footprint drop-in alternatives from the SK hynix DDR4 family, and practical design notes not found on the manufacturer product page.
Drop-in-Alternativen für H5ANAG4NBJR-RDC – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit H5ANAG4NBJR-RDC (gleiche Bauform und Footprint) – abweichend in Interface, Package, RoHS Status, Density, Organization.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
H5ANAG4NBJR-PBC
✅ Drop-In✓ Auf Lager
Preis auf Anfrage
Datenblatt ansehen →H5ANAG4NBJR-VKC
✅ Drop-In✓ Auf Lager
$14.4 / Stück
Datenblatt ansehen →H5ANAG8NBJR-RDC
✅ Drop-In✓ Auf Lager
$3.55 / Stück
Datenblatt ansehen →H5ANAG6NBJR-RDC
✅ Drop-In✓ Auf Lager
$9.6 / Stück
Datenblatt ansehen →H5ANAG6NBJR-VKC
✅ Drop-In✓ Auf Lager
$15 / Stück
Datenblatt ansehen →MT40A1G8AG-062E
✅ Drop-In✓ Auf Lager
$3.1 / Stück
Datenblatt ansehen →MT40A2G8AG-062E
✅ Drop-In✓ Auf Lager
$9.75 / Stück
Datenblatt ansehen →H5ANAG4NBJR-RDC Grenzwerte & elektrische Eigenschaften
| Speichertyp | DDR4 SDRAM |
| Density | 16 Gb (2 GB) |
| Speicherorganisation | 4G x 4 |
| Supply Voltage VDD | 1.2 V |
| Gehäuse | 78-ball FBGA |
| Montageart | Surface Mount |
| Prefetch | 16n (bank group architecture) |
| Schnittstelle | SSTL-12 |
| Eigenschaften | Bank groups, CA parity, data CRC, ODT, DLL-off mode |
| Operating Temperature (case) | -40C to +85C (industrial; extended to 95C per datasheet conditions) |
| Temperature Grade Suffix | RDC - industrial temperature, lead-free, halogen-free |
| RoHS-Status | Compliant (lead-free / halogen-free per RDC suffix) |
| VDDQ | 1.2 V |
| Product Family | SK hynix computing 16Gb DDR4 H5ANAG4(8_6)NBJR series |
H5ANAG4NBJR-RDC -40c to +85c (industrial; extended to 95c per datasheet conditions) Pinbelegungsleitfaden
Pinbelegung für H5ANAG4NBJR-RDC (-40c to +85c (industrial; extended to 95c per datasheet conditions)-Gehäuse). Dieser digitale IC umfasst GPIO, Kommunikationsschnittstellen (UART, SPI, I2C) und Versorgungspins. Alternative Pin-Funktionen und Konfigurationsoptionen entnehmen Sie dem Herstellerdatenblatt. Unverzichtbar für Embedded-System-Design und PCB-Layout.
Keine detaillierten Pinbelegungsdaten verfügbar für H5ANAG4NBJR-RDC.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
H5ANAG4NBJR-RDC ist geeignet für 6 Anwendungs: Desktop and Notebook Main Memory (UDIMM/SODIMM), Industrial PCs and Embedded Controllers, Networking Routers and Switches, Set-Top Boxes and Smart TV Platforms, Gaming Consoles and Graphics Buffers, Test, Measurement and Data-Acquisition Instruments.
Desktop and Notebook Main Memory (UDIMM/SODIMM)
The H5ANAG4NBJR-RDC is a native fit for client DIMM designs: sixteen x4 devices populate a single rank of a 64-bit UDIMM, delivering 32GB per rank, and two ranks reach 64GB per module. Its 2666MT/s class speed matches standard DDR4-2666 JEDEC DIMM timing for Intel and AMD client platforms, while the 1.2V rail keeps module power within client thermal budgets - roughly 20% lower voltage than equivalent DDR3 modules per SK hynix. The 78-ball FBGA footprint conforms to the JEDEC DIMM component land pattern, so no custom layout is needed. CA parity and data CRC improve command/data integrity on long, heavily loaded DIMM buses, and the industrial RDC grade additionally enables ruggedized embedded computing modules (e.g., COM Express memory) that must survive -40C cold start.
Empfohlen
Industrial PCs and Embedded Controllers
Factory automation controllers, industrial gateways, and fanless embedded PCs require DRAM that survives cold-start and high-ambient environments. The RDC suffix on H5ANAG4NBJR-RDC denotes industrial temperature screening: per SK hynix consumer DDR4 datasheets, the case temperature must be maintained between -40C and 85C under all operating conditions, with extended operation to 95C permitted under datasheet refresh conditions. Combined with 2GB per device (16Gb, 4Gx4), a compact SODIMM or onboard-soldered four-chip cluster provides 8GB without mechanical DIMM connectors that can fail under vibration. Self-refresh mode holds memory contents through low-power standby, and the halogen-free, lead-free build supports industrial environmental compliance requirements. Memory bandwidth at the 2666-class bin comfortably serves motion-control, vision, and HMI workloads.
Empfohlen
Networking Routers and Switches
Enterprise and carrier networking platforms use DDR4 SDRAM for packet buffers, route tables, and control-plane memory. The H5ANAG4NBJR-RDC fits this role with 2GB per device, the 2666-class speed bin for high sustained bandwidth, and DDR4 bank-group architecture that increases effective random-access throughput versus flat-bank DDR3 - important for queue-management access patterns. The x4 organization allows many devices per 64-bit channel, maximizing buffer memory per rank, while CA parity protects command integrity in electrically noisy backplane environments. The industrial RDC temperature grade (-40C to 85C case) supports outdoor and unventilated telecom cabinets, and data CRC adds write-data reliability for long-running network uptime targets. SK hynix positions its 16Gb DDR4 family explicitly for main-memory applications requiring large density and high bandwidth.
Empfohlen
Set-Top Boxes and Smart TV Platforms
Broadcast and streaming set-top boxes and smart TVs need a few gigabytes of DDR4 for video buffering, middleware, and application memory. A single H5ANAG4NBJR-RDC provides 2GB in one 78-ball FBGA component, keeping BOM count and board area minimal on cost-driven consumer platforms. The 1.2V operation and self-refresh standby reduce typical and standby power, helping products meet energy-efficiency regulations, while the 2666-class bin supplies the bandwidth needed for 4K HEVC decode pipelines with multiple simultaneous streams. For consumer SKUs shipped only in benign environments, the pin-compatible PBC commercial variant offers a cost reduction; the RDC industrial part is preferred when the same board is reused in outdoor or hospitality products that face wider temperature excursions.
Empfohlen
Gaming Consoles and Graphics Buffers
Game consoles and discrete graphics-adjacent designs require high-bandwidth frame and texture buffers with proven reliability. DDR4 x4 devices such as the H5ANAG4NBJR-RDC can be clustered eight or sixteen wide to build 64-bit or 128-bit buses, and the 16-bit prefetch with bank groups sustains high sequential bandwidth for frame-buffer traffic at the 2666-class bin. Sixteen devices deliver 32GB - ample for modern console unified-memory budgets. Data CRC and CA parity support long gaming sessions with zero visual artifacts, and SK hynix's fully synchronous operation referenced to both clock edges simplifies interface timing with mainstream SoC memory controllers. Thermal design should combine copper spreading with airflow to keep case temperature within the -40C to 85C datasheet window under sustained GPU-adjacent heat.
Empfohlen
Test, Measurement and Data-Acquisition Instruments
Oscilloscopes, logic analyzers, and high-speed data recorders stream captured waveforms into deep memory buffers. The H5ANAG4NBJR-RDC offers 2GB per component at 2666-class bandwidth; clustering devices across multiple 64-bit channels scales capture depth into tens of gigabytes. DDR4 bank-group architecture improves random access performance when the instrument engine interleaves capture writes with display reads. The industrial RDC temperature grade (-40C to 85C case per the SK hynix NBJR-series datasheet) suits benchtop instruments used in unconditioned production floors and vehicle-installed test systems. Designers should reserve controller bandwidth margins for refresh (including extended 85C-95C operation refresh requirements) when calculating guaranteed minimum sustained write throughput for continuous acquisition modes.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für H5ANAG4NBJR-RDC – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | H5ANAG4NBJR-PBC | H5ANAG8NBJR-RDC | MT40A2G8AG-062E |
|---|---|---|---|---|
| Package | 78-ball FBGA | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same (JEDEC) |
| Brand | SK Hynix | SK Hynix | SK Hynix | Micron Technology |
| Density | 16 Gb | 16 Gb | 16 Gb | 16 Gb |
| Organization | 4G x 4 | 4G x 4 | 2G x 8 | 2G x 8 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Features | Bank groups, CA parity, data CRC, ODT, DLL-off | Same feature set | Same feature set | JEDEC DDR4 feature set |
| RoHS / Halogen-Free | Compliant / Yes (RDC build) | Compliant / Yes | Compliant / Yes | Compliant |
Wichtigste Unterscheidungsmerkmale
- Industrial temperature support in a commodity DDR4 device (vs. H5ANAG4NBJR-PBC)
- x4 organization maximizes density per rank (vs. H5ANAG8NBJR-RDC)
- Same footprint JEDEC second source available (vs. MT40A2G8AG-062E)
Designhinweise
At the 2666MT/s class data rate, route address/command in fly-by topology with symmetric stubs and enable ODT on the H5ANAG4NBJR-RDC per byte lane; length-match DQS/DQ pairs within the datasheet skew budget. For multi-rank designs, fly-by CK/CA per JEDEC DDR4 topology is mandatory - T-topology will not close timing at this bin. Simulate with IBIS models from SK hynix and the memory controller vendor's DDR4 design guide.
Per SK hynix consumer DDR4 datasheets for the NBJR series, the DRAM case temperature must be maintained between -40C and 85C under all operating conditions; operation between 85C and 95C is permitted only under the datasheet extended-temperature refresh conditions, which increase refresh frequency and reduce available bandwidth. In enclosed industrial products, verify case temperature with thermocouples at max IDD workload and account for nearby heat sources such as SoCs and PoL converters.
Design a clean 1.2V rail for both VDD and VDDQ (SSTL-12 interface) with bulk and high-frequency decoupling at each device. Estimated: a single 16Gb device at 2666MT/s active workload can draw hundreds of milliamps; budget total IDD from the datasheet IDD tables for your actual access pattern and derate the PoL converter by 30%. Do not share the DDR4 rail with noisy switching loads; add a dedicated ferrite bead or point-of-load regulator.
Do not mix temperature grades (RDC with PBC/VKC) on the same board expecting identical timing over corner conditions; qualify the slowest grade. Confirm the part-number suffix decoding against the SK hynix numbering document before release - speed and temperature codes look similar but are not interchangeable. For new long-lifecycle designs, engage SK hynix early on DDR4 end-of-life planning as the industry transitions to DDR5.
Compliance-Informationen
RDC suffix denotes lead-free, halogen-free build per SK hynix part-numbering conventions for this series. REACH and conflict-minerals status not stated in provided data.