H5ANAG6NBJR-UHC vs H5ANAG6NCR-UHC Vergleich
Detaillierter Direktvergleich von H5ANAG6NBJR-UHC von SK hynix und H5ANAG6NCR-UHC von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5ANAG6NBJR-UHC | H5ANAG6NCR-UHC |
|---|---|---|
| Marke | SK hynix | SK hynix |
| Kategorie | DRAM | Mobile LPDDR4 |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $8,09 | $9,20 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gb | — |
| Speicherorganisation | 256M x 16 | 1G x 16 |
| Schnittstelle | DDR4 (CMOS) | CMOS, Double Data Rate IV |
| Gehäuse | PBGA96 / FBGA-96 (TFBGA) | FBGA-96 (PBGA-96) |
| Package Dimensions | 13 mm length (per JESD-30 R-PBGA-B96) | — |
| Access Mode | Multi Bank, Page Burst | — |
| Betriebstemperatur | -40C to +95C | [DATA_NEEDED: Operating temperature range] |
| Refresh | Auto / Self Refresh | [DATA_NEEDED: Refresh scheme] |
| Data Mask | Supported (DM function) | — |
| Asynchronous Reset | Supported | — |
| On-Chip Termination | Dynamic ODT | — |
| ZQ Calibration | Supported | — |
| Write Leveling | Supported | — |
| CRC | Supported | — |
| Supply Voltage Class | DDR4 (1.2 V class) | — |
| RoHS-Status | RoHS Compliant | [DATA_NEEDED: RoHS status] |
| REACH Compliance | Compliant | — |
| ECCN | EAR99 | — |
| HTS Code | 8542.32.00.36 | — |
| CAS-Latenz | [DATA_NEEDED: CAS Latency] | — |
| Max Data Rate | [DATA_NEEDED: Max Data Rate] | — |
| Memory Density | — | 16 Gb (2 GB) |
| Die Revision | — | C |
| Speed Grade | — | [DATA_NEEDED: Speed grade / data rate] |
| Supply Voltage (VDD) | — | [DATA_NEEDED: VDD voltage] |
| Configuration | — | 1 Channel, 1 Rank |
| Montageart | — | Surface Mount |
| Factory Packing Quantity | — | [DATA_NEEDED: Standard packing quantity] |
| Application | — | Main memory, embedded computing, industrial controllers |