H5ANAG6NBJR-UHC vs H5ANAG6NCR-UHC 对比
详细并排对比 H5ANAG6NBJR-UHC 出自 SK hynix 和 H5ANAG6NCR-UHC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5ANAG6NBJR-UHC | H5ANAG6NCR-UHC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | DRAM | Mobile LPDDR4 |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $8.09 | $9.20 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gb | — |
| 存储组织 | 256M x 16 | 1G x 16 |
| 接口 | DDR4 (CMOS) | CMOS, Double Data Rate IV |
| 封装 | PBGA96 / FBGA-96 (TFBGA) | FBGA-96 (PBGA-96) |
| Package Dimensions | 13 mm length (per JESD-30 R-PBGA-B96) | — |
| Access Mode | Multi Bank, Page Burst | — |
| 工作温度 | -40C to +95C | [DATA_NEEDED: Operating temperature range] |
| Refresh | Auto / Self Refresh | [DATA_NEEDED: Refresh scheme] |
| Data Mask | Supported (DM function) | — |
| Asynchronous Reset | Supported | — |
| On-Chip Termination | Dynamic ODT | — |
| ZQ Calibration | Supported | — |
| Write Leveling | Supported | — |
| CRC | Supported | — |
| Supply Voltage Class | DDR4 (1.2 V class) | — |
| RoHS 状态 | RoHS Compliant | [DATA_NEEDED: RoHS status] |
| REACH Compliance | Compliant | — |
| ECCN | EAR99 | — |
| HTS Code | 8542.32.00.36 | — |
| CAS 延迟 | [DATA_NEEDED: CAS Latency] | — |
| Max Data Rate | [DATA_NEEDED: Max Data Rate] | — |
| Memory Density | — | 16 Gb (2 GB) |
| Die Revision | — | C |
| Speed Grade | — | [DATA_NEEDED: Speed grade / data rate] |
| Supply Voltage (VDD) | — | [DATA_NEEDED: VDD voltage] |
| Configuration | — | 1 Channel, 1 Rank |
| 安装类型 | — | Surface Mount |
| Factory Packing Quantity | — | [DATA_NEEDED: Standard packing quantity] |
| Application | — | Main memory, embedded computing, industrial controllers |