H5ANAG6NCMR-XNI vs H5ANAG6NCR-VKC Vergleich
Detaillierter Direktvergleich von H5ANAG6NCMR-XNI von SK hynix und H5ANAG6NCR-VKC von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5ANAG6NCMR-XNI | H5ANAG6NCR-VKC |
|---|---|---|
| Marke | SK hynix | SK hynix |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $4,95 | $0,00 |
| Speichertyp | DDR4 SDRAM (volatile DRAM) | DDR4 SDRAM |
| Speichergröße | 16 Gb | — |
| Memory Organization | 1G x 16 | — |
| Datenrate | 3200 Mbps (DDR4-3200, XN speed bin) | [DATA_NEEDED: verified speed grade in Mbps] |
| Versorgungsspannung | 1.2 V | — |
| Technology | CMOS Double Data Rate IV Synchronous DRAM | CMOS |
| Power Class | Normal Power | — |
| Gehäuse | FBGA-96 | 96-ball FBGA |
| Montageart | Surface Mount | Surface Mount |
| Schnittstelle | Parallel (DDR4) | DDR4 (Double Data Rate 4) |
| Product Status | Active | — |
| Application Domain | Main memory, industrial controllers, computing modules, consumer electronics | — |
| Memory Format | DRAM | — |
| Speed Bin Family | UH/VK/WM/XN | — |
| Betriebstemperatur | [DATA_NEEDED: Operating Temperature] | [DATA_NEEDED: temperature suffix range confirmation] |
| VPP Supply Voltage | [DATA_NEEDED: VPP Supply Voltage] | — |
| MSL-Level | [DATA_NEEDED: MSL Level] | — |
| Memory Density | — | 16 Gbit |
| Speicherorganisation | — | 2G x 8 |
| Supply Voltage VDD | — | 1.2 V |
| Supply Voltage VDDQ | — | 1.2 V |
| Banks | — | 16 banks (4 bank groups x 4) |
| Burst Length | — | BL8 |
| Refresh Mode | — | 1x / 2x / 4X per JEDEC DDR4 |
| Application | — | Main memory (PC / server / embedded) |
| RoHS-Status | — | [DATA_NEEDED: RoHS compliance statement] |