H5ANAG8NCR-RDC vs H5ANAG8NCJR-XNC Vergleich
Detaillierter Direktvergleich von H5ANAG8NCR-RDC von SK hynix und H5ANAG8NCJR-XNC von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5ANAG8NCR-RDC | H5ANAG8NCJR-XNC |
|---|---|---|
| Marke | SK hynix | SK hynix |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,00 | $65,63 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | 16 Gbit |
| Speicherorganisation | 2G x 8 | 2G x 8 |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Gehäuse | 78-ball FBGA | FBGA-78 (7.5 x 11 mm) |
| Montageart | Surface Mount | Surface Mount |
| Schnittstelle | DDR4 (fully synchronous, both clock edges) | — |
| Family | H5ANAG8N 16Gb DDR4 | — |
| Application Segment | Main memory (server, networking, industrial, embedded) | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | 0C to +95C |
| Max Data Rate | [DATA_NEEDED: speed bin data rate in MT/s] | — |
| CAS-Latenz | [DATA_NEEDED: CAS latency] | — |
| Bank Groups | [DATA_NEEDED: bank/bank group count] | — |
| Refresh | [DATA_NEEDED: refresh specification] | [DATA_NEEDED: refresh specification] |
| RoHS-Status | [DATA_NEEDED: RoHS status] | Compliant |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | — |
| Datenrate | — | 3200 MT/s (DDR4-3200) |
| Process Node | — | 1z nm (non-EUV) |
| Die Bit Density | — | 0.296 Gb/mm2 |
| Peak Bandwidth (per 64-bit channel) | — | 25.6 GB/s at DDR4-3200 |
| CAS Latency (CL) | — | [DATA_NEEDED: CAS Latency] |
| Base Part Number Family | — | H5ANAG8NCJR (16Gb DDR4 CMOS SDRAM) |
| Speed Grade Suffix | — | -XNC (0~95C commercial) |