H5TC4G63AFR-PBA vs H5TC4G63AFR-PBJ Vergleich
Detaillierter Direktvergleich von H5TC4G63AFR-PBA von SK hynix und H5TC4G63AFR-PBJ von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5TC4G63AFR-PBA | H5TC4G63AFR-PBJ |
|---|---|---|
| Marke | SK hynix | SK hynix |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3,98 | $7,50 |
| Speichertyp | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | — |
| Speicherorganisation | 256M x 16 | — |
| Supply Voltage (VDD/VDDQ) | 1.35V | — |
| Datenrate | 1866 Mbps (PC3L-14900) | [DATA_NEEDED: Data rate (e.g., 1600 Mbps)] |
| Gehäuse | 96-ball FBGA | 96-ball TFBGA |
| Ball Pitch | 0.8mm | — |
| Number of Banks | 8 | — |
| Burst Length | 8 and 4 (with burst chop) | — |
| CAS Latency (CL) | 11, 12, 13 | — |
| Betriebstemperaturbereich | 0°C to +95°C (Tcase) | — |
| Schnittstelle | 16-bit I/O | — |
| On-Die Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | Yes |
| Write Leveling | Yes | Yes |
| Auto Self-Refresh | Yes | Yes |
| Partial Array Self-Refresh | Yes | — |
| RoHS | Compliant | — |
| Speichergröße | — | 4 Gb (256M x 16) |
| Versorgungsspannung | — | 1.35 V |
| Temperature Grade | — | Industrial (-40°C to +95°C) |
| Refresh Cycles | — | 8192 |
| Package Shape | — | Rectangular |
| Number of Terminals | — | 96 |
| CAS-Latenz | — | [DATA_NEEDED: CAS Latency] |
| Access Time | — | 0.225 ns (from H5TC4G63AFR-PBR datasheet) |
| Data Mask | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| RoHS-Status | — | [DATA_NEEDED: RoHS Status] |