IAUA180N04S5N012AUMA1 vs IAUCN04S7N037GATMA1 Vergleich
Detaillierter Direktvergleich von IAUA180N04S5N012AUMA1 von Infineon und IAUCN04S7N037GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUA180N04S5N012AUMA1 - 40V 180A OptiMOS-5 N-MOSFET | Infineon
IAUA180N04S5N012AUMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUA180N04S5N012AUMA1 | IAUCN04S7N037GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,96 | $0,89 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IAUA180N04S5N012AUMA1 | — |
| Series | OptiMOS-5 40 V | OptiMOS 7 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) | 180 A (Tc) | — |
| Maximum Power Dissipation (PD) | 125 W (Tc) | — |
| R_DS(on) (max) | 1.2 mΩ at 10 V VGS | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gehäuse | PG-HSOF-5-2 (sTOLL, MO-319A / HSOF-5), 7x8 mm² | SSO4G 5x6 mm² (PG-THSOG-4-1) |
| Montageart | Surface Mount | Surface Mount (IMS substrate attach compatible) |
| Betriebstemperaturbereich | -55 °C to +175 °C (Tj) | [DATA_NEEDED: junction/ambient temperature limits] |
| Technology | OptiMOS-5 Trench | Trench MOSFET, N-Channel |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| RoHS-Status | Compliant | Compliant |
| Continuous Drain Current (ID) at Tj | — | 91 A |
| On-State Resistance RDS(on) typical | — | 3.65 mΩ at VGS = 10 V |
| Power Dissipation (PD) at Tc | — | 57 W |
| Channel Type | — | N-Channel |
| Operating Mode | — | Enhancement |
| MSL-Level | — | [DATA_NEEDED: MSL level] |
| Gate Charge (Qg) typical | — | [DATA_NEEDED: total gate charge] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/range] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |