IAUA180N04S5N012AUMA1 vs IAUCN04S7N037GATMA1 Comparison

Detailed side-by-side comparison of IAUA180N04S5N012AUMA1 by Infineon and IAUCN04S7N037GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUA180N04S5N012AUMA1

IAUA180N04S5N012AUMA1 - 40V 180A OptiMOS-5 N-MOSFET | Infineon

IAUA180N04S5N012AUMA1 βœ“ Active
Infineon
IAUCN04S7N037GATMA1

IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon

IAUCN04S7N037GATMA1 βœ“ Active

Specification Comparison

Parameter IAUA180N04S5N012AUMA1 IAUCN04S7N037GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.96 $0.89
Manufacturer Infineon Technologies Infineon Technologies
Part Number IAUA180N04S5N012AUMA1 β€”
Series OptiMOS-5 40 V OptiMOS 7
FET Type N-Channel β€”
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) 180 A (Tc) β€”
Maximum Power Dissipation (PD) 125 W (Tc) β€”
R_DS(on) (max) 1.2 mΞ© at 10 V VGS β€”
Gate-Source Voltage (VGS) max Β±20 V β€”
Package PG-HSOF-5-2 (sTOLL, MO-319A / HSOF-5), 7x8 mmΒ² SSO4G 5x6 mmΒ² (PG-THSOG-4-1)
Mounting Type Surface Mount Surface Mount (IMS substrate attach compatible)
Operating Temperature Range -55 Β°C to +175 Β°C (Tj) [DATA_NEEDED: junction/ambient temperature limits]
Technology OptiMOS-5 Trench Trench MOSFET, N-Channel
Automotive Qualification AEC-Q101 AEC-Q101
RoHS Status Compliant Compliant
Continuous Drain Current (ID) at Tj β€” 91 A
On-State Resistance RDS(on) typical β€” 3.65 mΞ© at VGS = 10 V
Power Dissipation (PD) at Tc β€” 57 W
Channel Type β€” N-Channel
Operating Mode β€” Enhancement
MSL Level β€” [DATA_NEEDED: MSL level]
Gate Charge (Qg) typical β€” [DATA_NEEDED: total gate charge]
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical/range]
Input Capacitance (Ciss) β€” [DATA_NEEDED: Ciss]

Datasheets & Resources

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