IAUA180N04S5N012AUMA1 vs IAUCN04S7N037GATMA1 对比
详细并排对比 IAUA180N04S5N012AUMA1 出自 Infineon 和 IAUCN04S7N037GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IAUA180N04S5N012AUMA1 | IAUCN04S7N037GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.96 | $0.89 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IAUA180N04S5N012AUMA1 | — |
| Series | OptiMOS-5 40 V | OptiMOS 7 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) | 180 A (Tc) | — |
| Maximum Power Dissipation (PD) | 125 W (Tc) | — |
| R_DS(on) (max) | 1.2 mΩ at 10 V VGS | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| 封装 | PG-HSOF-5-2 (sTOLL, MO-319A / HSOF-5), 7x8 mm² | SSO4G 5x6 mm² (PG-THSOG-4-1) |
| 安装类型 | Surface Mount | Surface Mount (IMS substrate attach compatible) |
| 工作温度范围 | -55 °C to +175 °C (Tj) | [DATA_NEEDED: junction/ambient temperature limits] |
| Technology | OptiMOS-5 Trench | Trench MOSFET, N-Channel |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| RoHS 状态 | Compliant | Compliant |
| Continuous Drain Current (ID) at Tj | — | 91 A |
| On-State Resistance RDS(on) typical | — | 3.65 mΩ at VGS = 10 V |
| Power Dissipation (PD) at Tc | — | 57 W |
| Channel Type | — | N-Channel |
| Operating Mode | — | Enhancement |
| MSL 等级 | — | [DATA_NEEDED: MSL level] |
| Gate Charge (Qg) typical | — | [DATA_NEEDED: total gate charge] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/range] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |