IAUC100N04S6L020ATMA1 vs IAUC100N04S6L014ATMA1 Vergleich
Detaillierter Direktvergleich von IAUC100N04S6L020ATMA1 von Infineon und IAUC100N04S6L014ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC100N04S6L020ATMA1 - 40V 100A 2mΩ OptiMOS 6 MOSFET | Infineon
IAUC100N04S6L020ATMA1 ✓ AktivInfineon
IAUC100N04S6L014ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6L014ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUC100N04S6L020ATMA1 | IAUC100N04S6L014ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,86 | $0,72 |
| FET Type | N-Channel | — |
| Drain-Source Breakdown Voltage V(BR)DSS | 40 V | — |
| Continuous Drain Current (Tc) | 100 A | — |
| Power Dissipation (Tc) | 75 W | — |
| RDS(on) Maximum @ VGS=10V, ID=50A | 2.04 mΩ | — |
| RDS(on) Typical | 2.0 mΩ | — |
| Gate-Source Voltage VGS (max) | ±20 V | — |
| Gate Threshold Voltage VGS(th) Typical | 2.0 V | — |
| Technology | OptiMOS 6 | OptiMOS 6 |
| Betriebstemperaturbereich | -55 °C to +175 °C (TJ) | -55C to +175C |
| Gehäuse | PG-TDSON-8 (SS08, 5x6 mm leadless) | PG-TDSON-8 (SuperSO8, 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| Qualification | Automotive grade | — |
| Packaging | Tape & Reel (TMA1) | Tape & Reel (ATMA1 suffix) |
| RoHS-Status | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | IAUC / OptiMOS 6 40V |
| Transistortyp | — | N-Channel MOSFET |
| Mode | — | Enhancement |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D, Tc) | — | 100 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current] |
| R_DS(on) max (V_GS=10V) | — | 1.4 mOhm |
| Gate-Source Voltage (V_GS) max | — | [DATA_NEEDED: V_GS max rating] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical] |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: Q_G typical] |
| Power Dissipation (P_D, Tc) | — | 100 W |
| AEC-Q101 Qualification | — | Yes |
| MSL-Level | — | 1 |