IAUC100N04S6L020ATMA1 vs IAUC100N04S6L014ATMA1 Comparación
Comparación detallada lado a lado de IAUC100N04S6L020ATMA1 por Infineon y IAUC100N04S6L014ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUC100N04S6L020ATMA1 - 40V 100A 2mΩ OptiMOS 6 MOSFET | Infineon
IAUC100N04S6L020ATMA1 ✓ ActivoInfineon
IAUC100N04S6L014ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6L014ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUC100N04S6L020ATMA1 | IAUC100N04S6L014ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,86 | $0,72 |
| FET Type | N-Channel | — |
| Drain-Source Breakdown Voltage V(BR)DSS | 40 V | — |
| Continuous Drain Current (Tc) | 100 A | — |
| Power Dissipation (Tc) | 75 W | — |
| RDS(on) Maximum @ VGS=10V, ID=50A | 2.04 mΩ | — |
| RDS(on) Typical | 2.0 mΩ | — |
| Gate-Source Voltage VGS (max) | ±20 V | — |
| Gate Threshold Voltage VGS(th) Typical | 2.0 V | — |
| Technology | OptiMOS 6 | OptiMOS 6 |
| Rango de temperatura de funcionamiento | -55 °C to +175 °C (TJ) | -55C to +175C |
| Encapsulado | PG-TDSON-8 (SS08, 5x6 mm leadless) | PG-TDSON-8 (SuperSO8, 5x6 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Qualification | Automotive grade | — |
| Packaging | Tape & Reel (TMA1) | Tape & Reel (ATMA1 suffix) |
| Estado RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | IAUC / OptiMOS 6 40V |
| Tipo de transistor | — | N-Channel MOSFET |
| Mode | — | Enhancement |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D, Tc) | — | 100 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current] |
| R_DS(on) max (V_GS=10V) | — | 1.4 mOhm |
| Gate-Source Voltage (V_GS) max | — | [DATA_NEEDED: V_GS max rating] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical] |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: Q_G typical] |
| Power Dissipation (P_D, Tc) | — | 100 W |
| AEC-Q101 Qualification | — | Yes |
| Nivel MSL | — | 1 |