IAUC100N04S6L020ATMA1 vs IAUC100N04S6L014ATMA1 对比

详细并排对比 IAUC100N04S6L020ATMA1 出自 Infineon 和 IAUC100N04S6L014ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC100N04S6L020ATMA1 IAUC100N04S6L020ATMA1 - 40V 100A 2mΩ OptiMOS 6 MOSFET | Infineon

IAUC100N04S6L020ATMA1 - 40V 100A 2mΩ OptiMOS 6 MOSFET | Infineon

IAUC100N04S6L020ATMA1 ✓ 量产中
Infineon
IAUC100N04S6L014ATMA1 IAUC100N04S6L014ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6L014ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6L014ATMA1 ✓ 量产中

规格对比

参数 IAUC100N04S6L020ATMA1 IAUC100N04S6L014ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.86 $0.72
FET Type N-Channel —
Drain-Source Breakdown Voltage V(BR)DSS 40 V —
Continuous Drain Current (Tc) 100 A —
Power Dissipation (Tc) 75 W —
RDS(on) Maximum @ VGS=10V, ID=50A 2.04 mΩ —
RDS(on) Typical 2.0 mΩ —
Gate-Source Voltage VGS (max) ±20 V —
Gate Threshold Voltage VGS(th) Typical 2.0 V —
Technology OptiMOS 6 OptiMOS 6
工作温度范围 -55 °C to +175 °C (TJ) -55C to +175C
封装 PG-TDSON-8 (SS08, 5x6 mm leadless) PG-TDSON-8 (SuperSO8, 5x6 mm)
安装类型 Surface Mount Surface Mount
Qualification Automotive grade —
Packaging Tape & Reel (TMA1) Tape & Reel (ATMA1 suffix)
RoHS 状态 Compliant Compliant
Manufacturer — Infineon Technologies
Part Family — IAUC / OptiMOS 6 40V
晶体管类型 — N-Channel MOSFET
Mode — Enhancement
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D, Tc) — 100 A
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current]
R_DS(on) max (V_GS=10V) — 1.4 mOhm
Gate-Source Voltage (V_GS) max — [DATA_NEEDED: V_GS max rating]
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical]
Total Gate Charge (Q_G) — [DATA_NEEDED: Q_G typical]
Power Dissipation (P_D, Tc) — 100 W
AEC-Q101 Qualification — Yes
MSL 等级 — 1

数据手册与资源

浏览全部产品 创建 BOM 获取报价