IAUC100N04S6L025ATMA1 vs IAUC120N04S6L012ATMA1 Vergleich
Detaillierter Direktvergleich von IAUC100N04S6L025ATMA1 von Infineon und IAUC120N04S6L012ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC120N04S6L012ATMA1 - 40V 120A OptiMOS 6 N-MOSFET | Infineon
IAUC120N04S6L012ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUC100N04S6L025ATMA1 | IAUC120N04S6L012ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,62 | $1,21 |
| Technology | OptiMOS 6 40V trench MOSFET | — |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulse rating] | 480 A |
| On-State Resistance RDS(on) max at VGS=10V | 2.5 mOhm | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | [DATA_NEEDED: Qg at 20V VGS] |
| Power Dissipation (PD) at TC=25C | 62 W | — |
| Betriebs-Sperrschichttemperatur | -55 C to +175 C | — |
| Gehäuse | PG-TDSON-8 (SuperSO8 5x6 mm) | PG-TDSON-8 (TDSON-8, surface mount with exposed pad) |
| Montageart | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| MSL-Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 6 40V |
| Transistortyp | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TC | — | 120 A |
| On-State Resistance (RDS(on)) at 10V VGS | — | 1.2 mΩ (typ) |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th) value] |
| Power Dissipation (PD) at TC | — | 115 W |
| Betriebstemperaturbereich | — | -55 °C to +175 °C (junction) |
| Delivery Form | — | Tape & Reel |